ZrSi formation at ZrN/Si interface induced by ballistic and ionizing radiations

Fengyuan Lu, Maik Lang, Mengbing Huang, Fereydoon Namavar, Christina Trautmann, Rodney C. Ewing, Jie Lian

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Zirconium nitride films were deposited on Si substrates by an ion beam assisted deposition (IBAD) approach. The response of nanocrystalline ZrN/Si films upon intense ion irradiations was investigated with the focus on new phase formation. Zirconium silicide (ZrSi) forms at the ZrN/Si interface under intense irradiations of 300 keV Ne + and 1 MeV Kr 2+ in the elastic stopping regime. The strong ballistic effects may cause atom mixing at the ZrN/Si interface, leading to the precipitation of ZrSi. Interface mixing and the formation of ZrSi also occur with swift heavy ion irradiation (1.465 GeV Xe). Thermal spikes in the nano-scale latent tracks and transient high temperature may lead to the atom mixing across the ZrN/Si interface and subsequent ZrSi formation following thermal spikes.

Original languageEnglish (US)
Pages (from-to)266-270
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume286
DOIs
StatePublished - Sep 1 2012

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Ionizing radiation
Ballistics
Zirconium
ionizing radiation
ballistics
radiation
ion irradiation
spikes
Ion bombardment
zirconium nitrides
Ion beam assisted deposition
Atoms
stopping
atoms
heavy ions
Heavy ions
Nitrides
ion beams
irradiation
Irradiation

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

ZrSi formation at ZrN/Si interface induced by ballistic and ionizing radiations. / Lu, Fengyuan; Lang, Maik; Huang, Mengbing; Namavar, Fereydoon; Trautmann, Christina; Ewing, Rodney C.; Lian, Jie.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 286, 01.09.2012, p. 266-270.

Research output: Contribution to journalArticle

Lu, Fengyuan ; Lang, Maik ; Huang, Mengbing ; Namavar, Fereydoon ; Trautmann, Christina ; Ewing, Rodney C. ; Lian, Jie. / ZrSi formation at ZrN/Si interface induced by ballistic and ionizing radiations. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2012 ; Vol. 286. pp. 266-270.
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abstract = "Zirconium nitride films were deposited on Si substrates by an ion beam assisted deposition (IBAD) approach. The response of nanocrystalline ZrN/Si films upon intense ion irradiations was investigated with the focus on new phase formation. Zirconium silicide (ZrSi) forms at the ZrN/Si interface under intense irradiations of 300 keV Ne + and 1 MeV Kr 2+ in the elastic stopping regime. The strong ballistic effects may cause atom mixing at the ZrN/Si interface, leading to the precipitation of ZrSi. Interface mixing and the formation of ZrSi also occur with swift heavy ion irradiation (1.465 GeV Xe). Thermal spikes in the nano-scale latent tracks and transient high temperature may lead to the atom mixing across the ZrN/Si interface and subsequent ZrSi formation following thermal spikes.",
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AU - Ewing, Rodney C.

AU - Lian, Jie

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AB - Zirconium nitride films were deposited on Si substrates by an ion beam assisted deposition (IBAD) approach. The response of nanocrystalline ZrN/Si films upon intense ion irradiations was investigated with the focus on new phase formation. Zirconium silicide (ZrSi) forms at the ZrN/Si interface under intense irradiations of 300 keV Ne + and 1 MeV Kr 2+ in the elastic stopping regime. The strong ballistic effects may cause atom mixing at the ZrN/Si interface, leading to the precipitation of ZrSi. Interface mixing and the formation of ZrSi also occur with swift heavy ion irradiation (1.465 GeV Xe). Thermal spikes in the nano-scale latent tracks and transient high temperature may lead to the atom mixing across the ZrN/Si interface and subsequent ZrSi formation following thermal spikes.

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