Wet-chemical etching of Mn-Zn ferrite by focused Ar+-laser irradiation in H3PO4

Yong Feng Lu, M. Takai, S. Nagatomo, S. Namba

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Maskless etching of Mn-Zn ferrite in H3PO4 aqueous solution by Ar+-ion laser irradiation has been investigated to obtain high etching rates and aspect-ratios of etched grooves. The etching processes have been found to be photochemical in the low laser power region and thermochemical in the high laser power region. High etching rates of up to 340 μm/s and an aspect-ratio of 30 for slab structures have been achieved. In the case of high aspect-ratio structure, the etching rate was limited by the low diffusion efficiency of etched products in the etchant. Periodic ripple structures have been observed under specific etching conditions.

Original languageEnglish (US)
Pages (from-to)319-325
Number of pages7
JournalApplied Physics A Solids and Surfaces
Volume47
Issue number4
DOIs
StatePublished - Dec 1 1988

Fingerprint

Wet etching
Laser beam effects
Ferrite
ferrites
Etching
etching
irradiation
lasers
Aspect ratio
aspect ratio
etchants
Periodic structures
High power lasers
high aspect ratio
ripples
grooves
high power lasers
slabs
Ions
aqueous solutions

Keywords

  • 81.40
  • 82.65

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Wet-chemical etching of Mn-Zn ferrite by focused Ar+-laser irradiation in H3PO4. / Lu, Yong Feng; Takai, M.; Nagatomo, S.; Namba, S.

In: Applied Physics A Solids and Surfaces, Vol. 47, No. 4, 01.12.1988, p. 319-325.

Research output: Contribution to journalArticle

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