Wavelength dependent propagation loss characteristics of SiGe/Si planar waveguides

B. L. Weiss, Z. Yang, F. Namavar

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The propagation loss of Si0.9 Ge0.1/Si planar optical waveguides has been measured at wavelengths of 1.15 and 1.523µm. The results show that these waveguides have a low propagation loss (<ldB/cm) at a wavelength of 1.523µm, which is due to the intrinsic absorption of SiGe whereas at a wavelength of 1.15µm its loss is determined by both the SiGe absorption edge and defects at the SiGe/Si interface.

Original languageEnglish (US)
Pages (from-to)2218-2220
Number of pages3
JournalElectronics Letters
Volume28
Issue number24
DOIs
StatePublished - Nov 1992

Fingerprint

Planar waveguides
Wavelength
Optical waveguides
Waveguides
Defects

Keywords

  • Optical waveguides
  • Optoelectronics
  • Semiconductors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Wavelength dependent propagation loss characteristics of SiGe/Si planar waveguides. / Weiss, B. L.; Yang, Z.; Namavar, F.

In: Electronics Letters, Vol. 28, No. 24, 11.1992, p. 2218-2220.

Research output: Contribution to journalArticle

Weiss, B. L. ; Yang, Z. ; Namavar, F. / Wavelength dependent propagation loss characteristics of SiGe/Si planar waveguides. In: Electronics Letters. 1992 ; Vol. 28, No. 24. pp. 2218-2220.
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