Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments

A. Sokolov, R. Sabirianov, I. Sabirianov, B. Doudin

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Large hysteretic resistance changes are reported on sub-100nm diameter metallic nanowires including thin dielectric junctions. Bi-stable 50% switching in a double junction geometry is modeled in terms of an occupation-driven metal-insulator transition in one of the two junctions, using the generalized Poisson expressions of Oka and Nagaosa (2005Phys. Rev. Lett.95266403). It illustrates how a band bending scheme can be generalized for strongly correlated electron systems. The magnetic constituents of the nanowires provide a magnetoresistive signature of the two resistance states, confirming our model and enabling a four states device application.

Original languageEnglish (US)
Article number485303
JournalJournal of Physics Condensed Matter
Volume21
Issue number48
DOIs
StatePublished - Dec 22 2009

Fingerprint

Magnetoresistance
Nanowires
filaments
signatures
Metal insulator transition
Electric potential
electric potential
nanowires
occupation
Geometry
Electrons
insulators
geometry
metals
electrons

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments. / Sokolov, A.; Sabirianov, R.; Sabirianov, I.; Doudin, B.

In: Journal of Physics Condensed Matter, Vol. 21, No. 48, 485303, 22.12.2009.

Research output: Contribution to journalArticle

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