Visible electroluminescence from porous silicon np heterojunction diodes

Fereydoon Namavar, H. Paul Maruska, Nader M. Kalkhoran

Research output: Contribution to journalArticle

183 Citations (Scopus)

Abstract

We report the preparation of silicon-based visible light-emitting diodes, configured as heterojunctions between porous silicon (formed by electrochemical etching of p-type silicon wafers), and n-type indium tin oxide (ITO). The transparent ITO film allows light emission through the top surface of the device, under a forward electrical bias of several volts across the junction. Photogenerated currents are observed under reverse biases. A tentative model for this electroluminescence is presented, based on injection of minority carriers through a narrow interphase region into the porous silicon structure, where radiative recombination occurs.

Original languageEnglish (US)
Pages (from-to)2514-2516
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number20
DOIs
StatePublished - Dec 1 1992

Fingerprint

porous silicon
electroluminescence
indium oxides
tin oxides
heterojunctions
diodes
silicon
radiative recombination
minority carriers
light emission
oxide films
light emitting diodes
etching
wafers
injection
preparation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Visible electroluminescence from porous silicon np heterojunction diodes. / Namavar, Fereydoon; Maruska, H. Paul; Kalkhoran, Nader M.

In: Applied Physics Letters, Vol. 60, No. 20, 01.12.1992, p. 2514-2516.

Research output: Contribution to journalArticle

Namavar, Fereydoon ; Maruska, H. Paul ; Kalkhoran, Nader M. / Visible electroluminescence from porous silicon np heterojunction diodes. In: Applied Physics Letters. 1992 ; Vol. 60, No. 20. pp. 2514-2516.
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