A new Si02-Si-Si02-Si-Si02-Si structure produced by the SIMOX process is used for dual, vertically integrated waveguiding in silicon at X = 1.3 pm. Independent waveguiding is observed when 2-pm-thick Si cores are separated by 0.36-pm-thick Si02. Coupled waveguiding is found for an 0.12 pm intercore oxide thickness.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering