Vertically Integrated Silicon-on-Insulator Waveguides

R. A. Soref, E. Cortesi, Fereydoon Namavar

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

A new Si02-Si-Si02-Si-Si02-Si structure produced by the SIMOX process is used for dual, vertically integrated waveguiding in silicon at X = 1.3 pm. Independent waveguiding is observed when 2-pm-thick Si cores are separated by 0.36-pm-thick Si02. Coupled waveguiding is found for an 0.12 pm intercore oxide thickness.

Original languageEnglish (US)
Pages (from-to)22-24
Number of pages3
JournalIEEE Photonics Technology Letters
Volume3
Issue number1
DOIs
StatePublished - Jan 1 1991

Fingerprint

Silicon
Oxides
Waveguides
insulators
waveguides
oxides
silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

Vertically Integrated Silicon-on-Insulator Waveguides. / Soref, R. A.; Cortesi, E.; Namavar, Fereydoon.

In: IEEE Photonics Technology Letters, Vol. 3, No. 1, 01.01.1991, p. 22-24.

Research output: Contribution to journalArticle

Soref, R. A. ; Cortesi, E. ; Namavar, Fereydoon. / Vertically Integrated Silicon-on-Insulator Waveguides. In: IEEE Photonics Technology Letters. 1991 ; Vol. 3, No. 1. pp. 22-24.
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