Variable angle spectroscopic ellipsometry in the vacuum ultraviolet

John A. Woollam, James N. Hilfiker, Thomas E. Tiwald, Corey L. Bungay, Ron A. Synowicki, Duane E. Meyer, Craig M. Herzinger, Galen L. Pfeiffer, Gerald T. Cooney, Steven E. Green

Research output: Contribution to journalConference article

15 Citations (Scopus)

Abstract

Optical properties of thin films and bulk materials at short wavelengths, including 157 nm and shorter, are needed for development of new lithographic processes, new fundamental science, and new metrology in the semiconductor, optical and data storage industries. Variable angle spectroscopic ellipsometry offers non-destructive and precise measurement of thin film thickness and refractive index in the wavelength range from 140 nm to 1700 nm (0.73 eV to 8.9 eV). The addition of short wavelengths allows analysis of multilayer dielectric stacks, often difficult to do using visible spectroscopy alone. Another major application is in study of wide bandgap materials such as SiC and GaN related compound semiconductors for blue lasers and detectors. This paper reviews the present status of spectroscopic ellipsometry applications in the vacuum ultraviolet.

Original languageEnglish (US)
Pages (from-to)197-205
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4099
DOIs
StatePublished - Dec 1 2000
EventOptical Metrology Roadmap for the Semiconductor, Optical, and Data Storage Industries - San Diego, CA, USA
Duration: Jul 30 2000Jul 31 2000

Fingerprint

Spectroscopic Ellipsometry
Spectroscopic ellipsometry
Ultraviolet
ellipsometry
Vacuum
Wavelength
Angle
vacuum
Thin Films
Semiconductors
wavelengths
Semiconductor materials
Optical Storage
Thin films
Data Storage
data storage
thin films
Metrology
Optical Properties
Refractive Index

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Woollam, J. A., Hilfiker, J. N., Tiwald, T. E., Bungay, C. L., Synowicki, R. A., Meyer, D. E., ... Green, S. E. (2000). Variable angle spectroscopic ellipsometry in the vacuum ultraviolet. Proceedings of SPIE - The International Society for Optical Engineering, 4099, 197-205. https://doi.org/10.1117/12.405820

Variable angle spectroscopic ellipsometry in the vacuum ultraviolet. / Woollam, John A.; Hilfiker, James N.; Tiwald, Thomas E.; Bungay, Corey L.; Synowicki, Ron A.; Meyer, Duane E.; Herzinger, Craig M.; Pfeiffer, Galen L.; Cooney, Gerald T.; Green, Steven E.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4099, 01.12.2000, p. 197-205.

Research output: Contribution to journalConference article

Woollam, JA, Hilfiker, JN, Tiwald, TE, Bungay, CL, Synowicki, RA, Meyer, DE, Herzinger, CM, Pfeiffer, GL, Cooney, GT & Green, SE 2000, 'Variable angle spectroscopic ellipsometry in the vacuum ultraviolet', Proceedings of SPIE - The International Society for Optical Engineering, vol. 4099, pp. 197-205. https://doi.org/10.1117/12.405820
Woollam, John A. ; Hilfiker, James N. ; Tiwald, Thomas E. ; Bungay, Corey L. ; Synowicki, Ron A. ; Meyer, Duane E. ; Herzinger, Craig M. ; Pfeiffer, Galen L. ; Cooney, Gerald T. ; Green, Steven E. / Variable angle spectroscopic ellipsometry in the vacuum ultraviolet. In: Proceedings of SPIE - The International Society for Optical Engineering. 2000 ; Vol. 4099. pp. 197-205.
@article{621c02054acd4238b5bae5d6512cd185,
title = "Variable angle spectroscopic ellipsometry in the vacuum ultraviolet",
abstract = "Optical properties of thin films and bulk materials at short wavelengths, including 157 nm and shorter, are needed for development of new lithographic processes, new fundamental science, and new metrology in the semiconductor, optical and data storage industries. Variable angle spectroscopic ellipsometry offers non-destructive and precise measurement of thin film thickness and refractive index in the wavelength range from 140 nm to 1700 nm (0.73 eV to 8.9 eV). The addition of short wavelengths allows analysis of multilayer dielectric stacks, often difficult to do using visible spectroscopy alone. Another major application is in study of wide bandgap materials such as SiC and GaN related compound semiconductors for blue lasers and detectors. This paper reviews the present status of spectroscopic ellipsometry applications in the vacuum ultraviolet.",
author = "Woollam, {John A.} and Hilfiker, {James N.} and Tiwald, {Thomas E.} and Bungay, {Corey L.} and Synowicki, {Ron A.} and Meyer, {Duane E.} and Herzinger, {Craig M.} and Pfeiffer, {Galen L.} and Cooney, {Gerald T.} and Green, {Steven E.}",
year = "2000",
month = "12",
day = "1",
doi = "10.1117/12.405820",
language = "English (US)",
volume = "4099",
pages = "197--205",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

}

TY - JOUR

T1 - Variable angle spectroscopic ellipsometry in the vacuum ultraviolet

AU - Woollam, John A.

AU - Hilfiker, James N.

AU - Tiwald, Thomas E.

AU - Bungay, Corey L.

AU - Synowicki, Ron A.

AU - Meyer, Duane E.

AU - Herzinger, Craig M.

AU - Pfeiffer, Galen L.

AU - Cooney, Gerald T.

AU - Green, Steven E.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - Optical properties of thin films and bulk materials at short wavelengths, including 157 nm and shorter, are needed for development of new lithographic processes, new fundamental science, and new metrology in the semiconductor, optical and data storage industries. Variable angle spectroscopic ellipsometry offers non-destructive and precise measurement of thin film thickness and refractive index in the wavelength range from 140 nm to 1700 nm (0.73 eV to 8.9 eV). The addition of short wavelengths allows analysis of multilayer dielectric stacks, often difficult to do using visible spectroscopy alone. Another major application is in study of wide bandgap materials such as SiC and GaN related compound semiconductors for blue lasers and detectors. This paper reviews the present status of spectroscopic ellipsometry applications in the vacuum ultraviolet.

AB - Optical properties of thin films and bulk materials at short wavelengths, including 157 nm and shorter, are needed for development of new lithographic processes, new fundamental science, and new metrology in the semiconductor, optical and data storage industries. Variable angle spectroscopic ellipsometry offers non-destructive and precise measurement of thin film thickness and refractive index in the wavelength range from 140 nm to 1700 nm (0.73 eV to 8.9 eV). The addition of short wavelengths allows analysis of multilayer dielectric stacks, often difficult to do using visible spectroscopy alone. Another major application is in study of wide bandgap materials such as SiC and GaN related compound semiconductors for blue lasers and detectors. This paper reviews the present status of spectroscopic ellipsometry applications in the vacuum ultraviolet.

UR - http://www.scopus.com/inward/record.url?scp=17744386708&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17744386708&partnerID=8YFLogxK

U2 - 10.1117/12.405820

DO - 10.1117/12.405820

M3 - Conference article

AN - SCOPUS:17744386708

VL - 4099

SP - 197

EP - 205

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

ER -