Variable angle of incidence spectroscopic ellipsometry: Application to GaAs-AlxGa1-xAs multiple heterostructures

Paul G. Snyder, Martin C. Rost, George H. Bu-Abbud, John A. Woollam, Samuel A. Alterovitz

Research output: Contribution to journalArticle

105 Citations (Scopus)

Abstract

The sensitivity of spectroscopic ellipsometry data to multilayer model parameters is shown to be a strong function of the angle of incidence. A quantitative study of sensitivity versus angle of incidence is performed for a GaAs-AlxGa1-xAs-GaAs substrate structure, showing that maximum sensitivity to layer thicknesses and AlGaAs composition occurs near the wavelength-dependent principal angle. These results are verified by experimental measurements on two molecular-beam epitaxy grown samples. New spectral features, not found in previous ellipsometry studies of similar structures, are also reported.

Original languageEnglish (US)
Pages (from-to)3293-3302
Number of pages10
JournalJournal of Applied Physics
Volume60
Issue number9
DOIs
StatePublished - Dec 1 1986

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ellipsometry
incidence
sensitivity
aluminum gallium arsenides
molecular beam epitaxy
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Variable angle of incidence spectroscopic ellipsometry : Application to GaAs-AlxGa1-xAs multiple heterostructures. / Snyder, Paul G.; Rost, Martin C.; Bu-Abbud, George H.; Woollam, John A.; Alterovitz, Samuel A.

In: Journal of Applied Physics, Vol. 60, No. 9, 01.12.1986, p. 3293-3302.

Research output: Contribution to journalArticle

Snyder, Paul G. ; Rost, Martin C. ; Bu-Abbud, George H. ; Woollam, John A. ; Alterovitz, Samuel A. / Variable angle of incidence spectroscopic ellipsometry : Application to GaAs-AlxGa1-xAs multiple heterostructures. In: Journal of Applied Physics. 1986 ; Vol. 60, No. 9. pp. 3293-3302.
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