UV-VUV spectroscopic ellipsometry of ternary MgxZn 1-xO (0≤x≤0.53) thin films

R. Schmidt-Grund, M. Schubert, B. Rheinländer, D. Fritsch, H. Schmidt, E. M. Kaidashev, M. Lorenz, C. M. Herzinger, M. Grundmann

Research output: Contribution to journalConference article

37 Citations (Scopus)

Abstract

The ordinary optical dielectric functions of pulsed-laser-deposition grown wurtzite c-plane MgxZn1-xO (0≤x≤0.53) thin films have been determined by using spectroscopic ellipsometry in the photon energy range from 4.5 to 9.5 eV. The dielectric functions reveal features which resemble those previously detected in uniaxial AlGaN and identified as E 1- and E2-type band-to-band transitions with no remarkable dependence of the transition energy on Mg content x. The E1- and E2-type transitions for ZnO are compared with pseudopotential band-structure calculations.

Original languageEnglish (US)
Pages (from-to)500-504
Number of pages5
JournalThin Solid Films
Volume455-456
DOIs
StatePublished - May 1 2004
EventThe 3rd International Conference on Spectroscopic Ellipsometry - Vienna, Austria
Duration: Jul 6 2003Jul 11 2003

Fingerprint

Spectroscopic ellipsometry
ellipsometry
Thin films
Pulsed laser deposition
thin films
Electron transitions
Band structure
Photons
wurtzite
pseudopotentials
pulsed laser deposition
energy
photons
aluminum gallium nitride

Keywords

  • Dielectric function
  • Ellipsometry
  • MgZnO
  • Optical properties
  • Vacuum ultraviolet
  • Zinc oxide (ZnO)
  • ZnMgO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Schmidt-Grund, R., Schubert, M., Rheinländer, B., Fritsch, D., Schmidt, H., Kaidashev, E. M., ... Grundmann, M. (2004). UV-VUV spectroscopic ellipsometry of ternary MgxZn 1-xO (0≤x≤0.53) thin films. Thin Solid Films, 455-456, 500-504. https://doi.org/10.1016/j.tsf.2003.11.249

UV-VUV spectroscopic ellipsometry of ternary MgxZn 1-xO (0≤x≤0.53) thin films. / Schmidt-Grund, R.; Schubert, M.; Rheinländer, B.; Fritsch, D.; Schmidt, H.; Kaidashev, E. M.; Lorenz, M.; Herzinger, C. M.; Grundmann, M.

In: Thin Solid Films, Vol. 455-456, 01.05.2004, p. 500-504.

Research output: Contribution to journalConference article

Schmidt-Grund, R, Schubert, M, Rheinländer, B, Fritsch, D, Schmidt, H, Kaidashev, EM, Lorenz, M, Herzinger, CM & Grundmann, M 2004, 'UV-VUV spectroscopic ellipsometry of ternary MgxZn 1-xO (0≤x≤0.53) thin films', Thin Solid Films, vol. 455-456, pp. 500-504. https://doi.org/10.1016/j.tsf.2003.11.249
Schmidt-Grund R, Schubert M, Rheinländer B, Fritsch D, Schmidt H, Kaidashev EM et al. UV-VUV spectroscopic ellipsometry of ternary MgxZn 1-xO (0≤x≤0.53) thin films. Thin Solid Films. 2004 May 1;455-456:500-504. https://doi.org/10.1016/j.tsf.2003.11.249
Schmidt-Grund, R. ; Schubert, M. ; Rheinländer, B. ; Fritsch, D. ; Schmidt, H. ; Kaidashev, E. M. ; Lorenz, M. ; Herzinger, C. M. ; Grundmann, M. / UV-VUV spectroscopic ellipsometry of ternary MgxZn 1-xO (0≤x≤0.53) thin films. In: Thin Solid Films. 2004 ; Vol. 455-456. pp. 500-504.
@article{4153e833983e4b2ea139dcc39c2723a2,
title = "UV-VUV spectroscopic ellipsometry of ternary MgxZn 1-xO (0≤x≤0.53) thin films",
abstract = "The ordinary optical dielectric functions of pulsed-laser-deposition grown wurtzite c-plane MgxZn1-xO (0≤x≤0.53) thin films have been determined by using spectroscopic ellipsometry in the photon energy range from 4.5 to 9.5 eV. The dielectric functions reveal features which resemble those previously detected in uniaxial AlGaN and identified as E 1- and E2-type band-to-band transitions with no remarkable dependence of the transition energy on Mg content x. The E1- and E2-type transitions for ZnO are compared with pseudopotential band-structure calculations.",
keywords = "Dielectric function, Ellipsometry, MgZnO, Optical properties, Vacuum ultraviolet, Zinc oxide (ZnO), ZnMgO",
author = "R. Schmidt-Grund and M. Schubert and B. Rheinl{\"a}nder and D. Fritsch and H. Schmidt and Kaidashev, {E. M.} and M. Lorenz and Herzinger, {C. M.} and M. Grundmann",
year = "2004",
month = "5",
day = "1",
doi = "10.1016/j.tsf.2003.11.249",
language = "English (US)",
volume = "455-456",
pages = "500--504",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - UV-VUV spectroscopic ellipsometry of ternary MgxZn 1-xO (0≤x≤0.53) thin films

AU - Schmidt-Grund, R.

AU - Schubert, M.

AU - Rheinländer, B.

AU - Fritsch, D.

AU - Schmidt, H.

AU - Kaidashev, E. M.

AU - Lorenz, M.

AU - Herzinger, C. M.

AU - Grundmann, M.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - The ordinary optical dielectric functions of pulsed-laser-deposition grown wurtzite c-plane MgxZn1-xO (0≤x≤0.53) thin films have been determined by using spectroscopic ellipsometry in the photon energy range from 4.5 to 9.5 eV. The dielectric functions reveal features which resemble those previously detected in uniaxial AlGaN and identified as E 1- and E2-type band-to-band transitions with no remarkable dependence of the transition energy on Mg content x. The E1- and E2-type transitions for ZnO are compared with pseudopotential band-structure calculations.

AB - The ordinary optical dielectric functions of pulsed-laser-deposition grown wurtzite c-plane MgxZn1-xO (0≤x≤0.53) thin films have been determined by using spectroscopic ellipsometry in the photon energy range from 4.5 to 9.5 eV. The dielectric functions reveal features which resemble those previously detected in uniaxial AlGaN and identified as E 1- and E2-type band-to-band transitions with no remarkable dependence of the transition energy on Mg content x. The E1- and E2-type transitions for ZnO are compared with pseudopotential band-structure calculations.

KW - Dielectric function

KW - Ellipsometry

KW - MgZnO

KW - Optical properties

KW - Vacuum ultraviolet

KW - Zinc oxide (ZnO)

KW - ZnMgO

UR - http://www.scopus.com/inward/record.url?scp=17144451983&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17144451983&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2003.11.249

DO - 10.1016/j.tsf.2003.11.249

M3 - Conference article

AN - SCOPUS:17144451983

VL - 455-456

SP - 500

EP - 504

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -