Unravelling the free electron behavior in InN

V. Darakchieva, T. Hofmann, M. Schubert, B. E. Sernelius, F. Giuliani, M. Y. Xie, P. O.Å Persson, B. Monemar, W. J. Schaff, C. L. Hsiao, L. C. Chen, Y. Nanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Precise measurement of the optical Hall effect in InN using magneto-optical generalized ellipsometry at IR and THz wavelengths, allows us to decouple the surface accumulation and bulk electron densities in InN films by non-contact optical means and further to precisely measure the effective mass and mobilities for polarizations parallel and perpendicular to the optical axis. Studies of InN films with different thicknesses, free electron densities and surface orientations enable an intricate picture of InN free electron properties to emerge. Striking findings on the scaling factors of the bulk electron densities with film thickness further supported by transmission electron microscopy point to an additional thickness dependent doping mechanism unrelated to dislocations. Surface electron accumulation is observed to occur not only at polar but also at non-polar and semi-polar wurtzite InN, and zinc blende InN surfaces. The persistent surface electron density shows a complex behavior with bulk density and surface orientation. This behavior might be exploited for tuning the surface charge in InN.

Original languageEnglish (US)
Title of host publicationProceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
Pages90-97
Number of pages8
DOIs
StatePublished - Dec 1 2008
Event2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 - Sydney, NSW, Australia
Duration: Jul 28 2008Aug 1 2008

Publication series

NameConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Other

Other2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08
CountryAustralia
CitySydney, NSW
Period7/28/088/1/08

Fingerprint

Carrier concentration
Electrons
Ellipsometry
Hall effect
Surface charge
Film thickness
Zinc
Tuning
Doping (additives)
Polarization
Transmission electron microscopy
Wavelength

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Darakchieva, V., Hofmann, T., Schubert, M., Sernelius, B. E., Giuliani, F., Xie, M. Y., ... Nanishi, Y. (2008). Unravelling the free electron behavior in InN. In Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08 (pp. 90-97). [4802099] (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2008.4802099

Unravelling the free electron behavior in InN. / Darakchieva, V.; Hofmann, T.; Schubert, M.; Sernelius, B. E.; Giuliani, F.; Xie, M. Y.; Persson, P. O.Å; Monemar, B.; Schaff, W. J.; Hsiao, C. L.; Chen, L. C.; Nanishi, Y.

Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. p. 90-97 4802099 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Darakchieva, V, Hofmann, T, Schubert, M, Sernelius, BE, Giuliani, F, Xie, MY, Persson, POÅ, Monemar, B, Schaff, WJ, Hsiao, CL, Chen, LC & Nanishi, Y 2008, Unravelling the free electron behavior in InN. in Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08., 4802099, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 90-97, 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08, Sydney, NSW, Australia, 7/28/08. https://doi.org/10.1109/COMMAD.2008.4802099
Darakchieva V, Hofmann T, Schubert M, Sernelius BE, Giuliani F, Xie MY et al. Unravelling the free electron behavior in InN. In Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. p. 90-97. 4802099. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2008.4802099
Darakchieva, V. ; Hofmann, T. ; Schubert, M. ; Sernelius, B. E. ; Giuliani, F. ; Xie, M. Y. ; Persson, P. O.Å ; Monemar, B. ; Schaff, W. J. ; Hsiao, C. L. ; Chen, L. C. ; Nanishi, Y. / Unravelling the free electron behavior in InN. Proceedings of the 2008 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD'08. 2008. pp. 90-97 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).
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