Understanding behavior of machining interface and dielectric molecular medium in nanoscale electro-machining

V. Kalyanasundaram, K. R. Virwani, D. E. Spearot, A. P. Malshe, K. P. Rajurkar

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Recently, a repeatable and scalable nanoscale electro-machining (nano-EM) process to produce sub-20 nm scale features has been demonstrated. In the presented research, the behavior of the liquid dielectric (n-decane) machining medium in nano-confinement (<3 nm) under physical boundary conditions is investigated using molecular dynamics (MD) simulation. Results show a four-fold increase in the density of n-decane indicating 'quasi-solid' behavior at the nano-EM interface, thereby acting as an effective charge transport medium between the nano-tool and the workpiece. The effect of such quasi-solid medium is demonstrated through the experimental observations of electrical breakdown (BD) at the sub-20 nm scale interface.

Original languageEnglish (US)
Pages (from-to)199-202
Number of pages4
JournalCIRP Annals - Manufacturing Technology
Volume57
Issue number1
DOIs
StatePublished - May 9 2008

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Machining
Dielectric liquids
Molecular dynamics
Charge transfer
Boundary conditions
Computer simulation

Keywords

  • Electrical discharge machining
  • Nanoscale electrical breakdown
  • Simulation

ASJC Scopus subject areas

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering

Cite this

Understanding behavior of machining interface and dielectric molecular medium in nanoscale electro-machining. / Kalyanasundaram, V.; Virwani, K. R.; Spearot, D. E.; Malshe, A. P.; Rajurkar, K. P.

In: CIRP Annals - Manufacturing Technology, Vol. 57, No. 1, 09.05.2008, p. 199-202.

Research output: Contribution to journalArticle

Kalyanasundaram, V. ; Virwani, K. R. ; Spearot, D. E. ; Malshe, A. P. ; Rajurkar, K. P. / Understanding behavior of machining interface and dielectric molecular medium in nanoscale electro-machining. In: CIRP Annals - Manufacturing Technology. 2008 ; Vol. 57, No. 1. pp. 199-202.
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