Two-Dimensional Metal-Free Organic Multiferroic Material for Design of Multifunctional Integrated Circuits

Zhengyuan Tu, Menghao Wu, Xiao C Zeng

Research output: Contribution to journalLetter

27 Citations (Scopus)

Abstract

Coexistence of ferromagnetism and ferroelectricity in a single 2D material is highly desirable for integration of multifunctional units in 2D material-based circuits. We report theoretical evidence of C6N8H organic network as being the first 2D organic multiferroic material with coexisting ferromagnetic and ferroelectric properties. The ferroelectricity stems from multimode proton-transfer within the 2D C6N8H network, in which a long-range proton-transfer mode is enabled by the facilitation of oxygen molecule when the network is exposed to the air. Such oxygen-assisted ferroelectricity also leads to a high Curie temperature and coupling between ferroelectricity and ferromagnetism. We also find that hydrogenation and carbon doping can transform the 2D g-C3N4 network from an insulator to an n-type/p-type magnetic semiconductor with modest bandgap. Akin to the dopant induced n/p channels in silicon wafer, a variety of dopant created functional units can be integrated into the g-C3N4 wafer by design for nanoelectronic applications.

Original languageEnglish (US)
Pages (from-to)1973-1978
Number of pages6
JournalJournal of Physical Chemistry Letters
Volume8
Issue number9
DOIs
StatePublished - May 4 2017

Fingerprint

Ferroelectricity
ferroelectricity
organic materials
integrated circuits
Integrated circuits
Metals
Proton transfer
Ferromagnetism
Doping (additives)
metals
ferromagnetism
wafers
Oxygen
Magnetic semiconductors
Nanoelectronics
protons
oxygen
Curie temperature
Silicon wafers
stems

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Two-Dimensional Metal-Free Organic Multiferroic Material for Design of Multifunctional Integrated Circuits. / Tu, Zhengyuan; Wu, Menghao; Zeng, Xiao C.

In: Journal of Physical Chemistry Letters, Vol. 8, No. 9, 04.05.2017, p. 1973-1978.

Research output: Contribution to journalLetter

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N2 - Coexistence of ferromagnetism and ferroelectricity in a single 2D material is highly desirable for integration of multifunctional units in 2D material-based circuits. We report theoretical evidence of C6N8H organic network as being the first 2D organic multiferroic material with coexisting ferromagnetic and ferroelectric properties. The ferroelectricity stems from multimode proton-transfer within the 2D C6N8H network, in which a long-range proton-transfer mode is enabled by the facilitation of oxygen molecule when the network is exposed to the air. Such oxygen-assisted ferroelectricity also leads to a high Curie temperature and coupling between ferroelectricity and ferromagnetism. We also find that hydrogenation and carbon doping can transform the 2D g-C3N4 network from an insulator to an n-type/p-type magnetic semiconductor with modest bandgap. Akin to the dopant induced n/p channels in silicon wafer, a variety of dopant created functional units can be integrated into the g-C3N4 wafer by design for nanoelectronic applications.

AB - Coexistence of ferromagnetism and ferroelectricity in a single 2D material is highly desirable for integration of multifunctional units in 2D material-based circuits. We report theoretical evidence of C6N8H organic network as being the first 2D organic multiferroic material with coexisting ferromagnetic and ferroelectric properties. The ferroelectricity stems from multimode proton-transfer within the 2D C6N8H network, in which a long-range proton-transfer mode is enabled by the facilitation of oxygen molecule when the network is exposed to the air. Such oxygen-assisted ferroelectricity also leads to a high Curie temperature and coupling between ferroelectricity and ferromagnetism. We also find that hydrogenation and carbon doping can transform the 2D g-C3N4 network from an insulator to an n-type/p-type magnetic semiconductor with modest bandgap. Akin to the dopant induced n/p channels in silicon wafer, a variety of dopant created functional units can be integrated into the g-C3N4 wafer by design for nanoelectronic applications.

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