Tunneling magnetoresistance sensors with different coupled free layers

Yen Fu Liu, Xiaolu Yin, Yi Yang, Dan Ewing, Paul J. De Rego, Sy-Hwang Liou

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Large differences of magnetic coercivity (HC), exchange coupling field (HE), and tunneling magnetoresistance ratio (TMR) in magnetic tunnel junctions with different coupled free layers are discussed. We demonstrate that the magnetization behavior of the free layer is not only dominated by the interfacial barrier layer but also affected largely by the magnetic or non-magnetic coupled free layers. All these parameters are sensitively controlled by the magnetic nanostructure, which can be tuned also by the magnetic annealing process. The optimized sensors exhibit a large field sensitivity of up to 261%/mT in the region of the reversal synthetic ferrimagnet at the pinned layers.

Original languageEnglish (US)
Article number056666
JournalAIP Advances
Volume7
Issue number5
DOIs
StatePublished - May 1 2017

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sensors
ferrimagnets
barrier layers
tunnel junctions
coercivity
magnetization
annealing

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Tunneling magnetoresistance sensors with different coupled free layers. / Liu, Yen Fu; Yin, Xiaolu; Yang, Yi; Ewing, Dan; De Rego, Paul J.; Liou, Sy-Hwang.

In: AIP Advances, Vol. 7, No. 5, 056666, 01.05.2017.

Research output: Contribution to journalArticle

Liu, Yen Fu ; Yin, Xiaolu ; Yang, Yi ; Ewing, Dan ; De Rego, Paul J. ; Liou, Sy-Hwang. / Tunneling magnetoresistance sensors with different coupled free layers. In: AIP Advances. 2017 ; Vol. 7, No. 5.
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