Trapping dendrimers in inorganic matrices

DAB-Am-n/zinc arsenate composites

Gustavo Larsen, R. Spretz, E. Lotero

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Layered dendrimer-loaded zinc arsenates (ZnAs) were synthesized under hydrothermal conditions. The so-called DAB-Am-n family of dendrimers is used to produce ZnAs solids with variable interlayer distances. Analysis of the 00k X-ray diffraction reflections reveals that the higher-generation DAB-Am-n dendrimers are "squeezed" between the ZnAs layers, judging from the observation of interlayer spacings that increase more slowly with dendrimer generation than the actual average diameters of the free dendrimers. Transmission electron microscopy shows that, under the synthetic conditions adopted here, the ZnAs sheets are subject to some level of bending and defects. The temperature-programmed oxidation patterns and elemental analysis of these materials are also discussed.

Original languageEnglish (US)
Pages (from-to)4077-4082
Number of pages6
JournalChemistry of Materials
Volume13
Issue number11
DOIs
StatePublished - Dec 10 2001

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Arsenates
Dendrimers
Zinc
Composite materials
arsenic acid
Transmission electron microscopy
X ray diffraction
Oxidation
Defects
Chemical analysis

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Trapping dendrimers in inorganic matrices : DAB-Am-n/zinc arsenate composites. / Larsen, Gustavo; Spretz, R.; Lotero, E.

In: Chemistry of Materials, Vol. 13, No. 11, 10.12.2001, p. 4077-4082.

Research output: Contribution to journalArticle

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