Transmission electron microscopy study of GaN on SiC on SIMOX grown by metalorganic chemical vapor deposition

W. L. Zhou, P. Pirouz, F. Namavar, P. C. Colter, M. Yoganathan, M. W. Leksono, J. I. Pankove

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

SiC was grown on the top Si layer of SIMOX by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on SiC by metalorganic (MO)CVD to produce a GaN/SiC/Si/SiO2/Si multilayer structure. This multilayer film was investigated by cross-sectional conventional transmission electron microscopy (TEM) and high resolution (HR)TEM. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN) grains with a smaller fraction of the cubic phase (c-GaN). The orientation relationship between most of the h-GaN grains was found to be (0001)GaN//(111)SiC; [112̄0]GaN//[11̄0]SiC. A preliminary characterization of the defects in h-GaN was also carried out.

Original languageEnglish (US)
Pages (from-to)1239-1242
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 2
StatePublished - Dec 1 1998

Fingerprint

Gallium nitride
gallium nitrides
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Transmission electron microscopy
transmission electron microscopy
carbonization
Multilayer films
Carbonization
High resolution transmission electron microscopy
laminates
Chemical vapor deposition
Multilayers
vapor deposition
Defects
high resolution
defects
gallium nitride

Keywords

  • Chemical Vapor Deposition
  • Defects
  • GaN
  • SIMOX
  • SiC
  • TEM

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Zhou, W. L., Pirouz, P., Namavar, F., Colter, P. C., Yoganathan, M., Leksono, M. W., & Pankove, J. I. (1998). Transmission electron microscopy study of GaN on SiC on SIMOX grown by metalorganic chemical vapor deposition. Materials Science Forum, 264-268(PART 2), 1239-1242.

Transmission electron microscopy study of GaN on SiC on SIMOX grown by metalorganic chemical vapor deposition. / Zhou, W. L.; Pirouz, P.; Namavar, F.; Colter, P. C.; Yoganathan, M.; Leksono, M. W.; Pankove, J. I.

In: Materials Science Forum, Vol. 264-268, No. PART 2, 01.12.1998, p. 1239-1242.

Research output: Contribution to journalArticle

Zhou, WL, Pirouz, P, Namavar, F, Colter, PC, Yoganathan, M, Leksono, MW & Pankove, JI 1998, 'Transmission electron microscopy study of GaN on SiC on SIMOX grown by metalorganic chemical vapor deposition', Materials Science Forum, vol. 264-268, no. PART 2, pp. 1239-1242.
Zhou WL, Pirouz P, Namavar F, Colter PC, Yoganathan M, Leksono MW et al. Transmission electron microscopy study of GaN on SiC on SIMOX grown by metalorganic chemical vapor deposition. Materials Science Forum. 1998 Dec 1;264-268(PART 2):1239-1242.
Zhou, W. L. ; Pirouz, P. ; Namavar, F. ; Colter, P. C. ; Yoganathan, M. ; Leksono, M. W. ; Pankove, J. I. / Transmission electron microscopy study of GaN on SiC on SIMOX grown by metalorganic chemical vapor deposition. In: Materials Science Forum. 1998 ; Vol. 264-268, No. PART 2. pp. 1239-1242.
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