Transmission electron microscopy study of GaN on SiC on SIMOX grown by metalorganic chemical vapor deposition

W. L. Zhou, P. Pirouz, F. Namavar, P. C. Colter, M. Yoganathan, M. W. Leksono, J. I. Pankove

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3 Scopus citations

Abstract

SiC was grown on the top Si layer of SIMOX by carbonization followed by chemical vapor deposition (CVD). Subsequently, GaN was deposited on SiC by metalorganic (MO)CVD to produce a GaN/SiC/Si/SiO2/Si multilayer structure. This multilayer film was investigated by cross-sectional conventional transmission electron microscopy (TEM) and high resolution (HR)TEM. The GaN layer was found to consist of predominately hexagonal gallium nitride (h-GaN) grains with a smaller fraction of the cubic phase (c-GaN). The orientation relationship between most of the h-GaN grains was found to be (0001)GaN//(111)SiC; [112̄0]GaN//[11̄0]SiC. A preliminary characterization of the defects in h-GaN was also carried out.

Original languageEnglish (US)
Pages (from-to)1239-1242
Number of pages4
JournalMaterials Science Forum
Volume264-268
Issue numberPART 2
Publication statusPublished - Dec 1 1998

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Keywords

  • Chemical Vapor Deposition
  • Defects
  • GaN
  • SIMOX
  • SiC
  • TEM

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Zhou, W. L., Pirouz, P., Namavar, F., Colter, P. C., Yoganathan, M., Leksono, M. W., & Pankove, J. I. (1998). Transmission electron microscopy study of GaN on SiC on SIMOX grown by metalorganic chemical vapor deposition. Materials Science Forum, 264-268(PART 2), 1239-1242.