Transition from negative magnetoresistance behavior to positive behavior in Co20(Cu1-xGex)80 ribbons

J. He, Z. D. Zhang, J. P. Liu, D. J. Sellmyer

Research output: Contribution to journalArticle

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Abstract

We report a transition of the giant magnetoresistance (GMR) behavior in nanocrystalline Co20(Cu1-xGex)80 ribbons from negative to positive, as the semiconductor Ge substitutes for the Cu matrix. The growth of the hexagonal Co3Ge2 compound leads to a change of the physical origin of the GMR. The normal spin-dependent transport behavior in the CoCu granular system evolves into Coulomb blockade behavior of electronic tunneling in ribbons with a Co/Co3Ge 2/Co junctionlike configuration.

Original languageEnglish (US)
Pages (from-to)1779-1781
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number10
DOIs
StatePublished - Mar 11 2002

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Transition from negative magnetoresistance behavior to positive behavior in Co20(Cu1-xGex)80 ribbons. / He, J.; Zhang, Z. D.; Liu, J. P.; Sellmyer, D. J.

In: Applied Physics Letters, Vol. 80, No. 10, 11.03.2002, p. 1779-1781.

Research output: Contribution to journalArticle

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