Tip-enhanced near-field Raman spectroscopy using an scanning tunneling microscope with side illumination optics

K. J. Yi, X. N. He, Yongfeng Lu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Raman spectroscopy (RS) is a key tool to characterize residual stress in silicon devices because the vibrational frequencies of a silicon substrate change with its stress. However, due to the intrinsic optical diffraction limit, conventional micro-Raman spectroscopy can only have a probe resolution of around 1 μm2, which is not sufficient for nanotechnology-oriented electronic industry. Low sensitivity is another problem to be solved to maximize the potential of this technique. In this study, a novel Raman spectrometer, which can overcome the optical diffraction limit, was built with the attempt to improve the resolution as well as the detection sensitivity. This approach instrument, which is based upon tip-enhanced near-field effects, has a nanoscale resolution by deploying a silver-coated tungsten tip mounted on a scanning tunneling microscope (STM) with side illumination optics. It features fast and reliable optical alignment, versatile sample adaptability and effective far-field signal suppression. The performance was evaluated by observing the enhancement effects on silicon substrates and single-walled carbon nanotubes (SWCNTs). It was found that apparent enhancement as high as 120% on silicon substrates could be achieved using the depolarization technique. It is believed that this technique is promising for future diagnosis of semiconductor materials and devices at nanoscales, especially for stress mapping of semiconductor devices.

Original languageEnglish (US)
Title of host publicationLaser-based Micro- and Nanopackaging and Assembly II
DOIs
StatePublished - Mar 31 2008
EventLaser-based Micro- and Nanopackaging and Assembly II - San Jose, CA, United States
Duration: Jan 22 2008Jan 24 2008

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6880
ISSN (Print)0277-786X

Conference

ConferenceLaser-based Micro- and Nanopackaging and Assembly II
CountryUnited States
CitySan Jose, CA
Period1/22/081/24/08

Fingerprint

Raman spectroscopy
Optics
near fields
Microscopes
Lighting
illumination
microscopes
optics
Scanning
Silicon
scanning
silicon
Semiconductor devices
semiconductor devices
instrument approach
Substrates
Diffraction
augmentation
Electronics industry
Depolarization

Keywords

  • Apparent enhancement factor
  • Far-field
  • Near-field
  • Scanning tunneling microscope
  • Silicon devices
  • Tip-enhanced Raman spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Yi, K. J., He, X. N., & Lu, Y. (2008). Tip-enhanced near-field Raman spectroscopy using an scanning tunneling microscope with side illumination optics. In Laser-based Micro- and Nanopackaging and Assembly II [688006] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6880). https://doi.org/10.1117/12.762183

Tip-enhanced near-field Raman spectroscopy using an scanning tunneling microscope with side illumination optics. / Yi, K. J.; He, X. N.; Lu, Yongfeng.

Laser-based Micro- and Nanopackaging and Assembly II. 2008. 688006 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6880).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yi, KJ, He, XN & Lu, Y 2008, Tip-enhanced near-field Raman spectroscopy using an scanning tunneling microscope with side illumination optics. in Laser-based Micro- and Nanopackaging and Assembly II., 688006, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6880, Laser-based Micro- and Nanopackaging and Assembly II, San Jose, CA, United States, 1/22/08. https://doi.org/10.1117/12.762183
Yi KJ, He XN, Lu Y. Tip-enhanced near-field Raman spectroscopy using an scanning tunneling microscope with side illumination optics. In Laser-based Micro- and Nanopackaging and Assembly II. 2008. 688006. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.762183
Yi, K. J. ; He, X. N. ; Lu, Yongfeng. / Tip-enhanced near-field Raman spectroscopy using an scanning tunneling microscope with side illumination optics. Laser-based Micro- and Nanopackaging and Assembly II. 2008. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{20534e78603f4be78f9ba027fd91feef,
title = "Tip-enhanced near-field Raman spectroscopy using an scanning tunneling microscope with side illumination optics",
abstract = "Raman spectroscopy (RS) is a key tool to characterize residual stress in silicon devices because the vibrational frequencies of a silicon substrate change with its stress. However, due to the intrinsic optical diffraction limit, conventional micro-Raman spectroscopy can only have a probe resolution of around 1 μm2, which is not sufficient for nanotechnology-oriented electronic industry. Low sensitivity is another problem to be solved to maximize the potential of this technique. In this study, a novel Raman spectrometer, which can overcome the optical diffraction limit, was built with the attempt to improve the resolution as well as the detection sensitivity. This approach instrument, which is based upon tip-enhanced near-field effects, has a nanoscale resolution by deploying a silver-coated tungsten tip mounted on a scanning tunneling microscope (STM) with side illumination optics. It features fast and reliable optical alignment, versatile sample adaptability and effective far-field signal suppression. The performance was evaluated by observing the enhancement effects on silicon substrates and single-walled carbon nanotubes (SWCNTs). It was found that apparent enhancement as high as 120{\%} on silicon substrates could be achieved using the depolarization technique. It is believed that this technique is promising for future diagnosis of semiconductor materials and devices at nanoscales, especially for stress mapping of semiconductor devices.",
keywords = "Apparent enhancement factor, Far-field, Near-field, Scanning tunneling microscope, Silicon devices, Tip-enhanced Raman spectroscopy",
author = "Yi, {K. J.} and He, {X. N.} and Yongfeng Lu",
year = "2008",
month = "3",
day = "31",
doi = "10.1117/12.762183",
language = "English (US)",
isbn = "9780819470553",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Laser-based Micro- and Nanopackaging and Assembly II",

}

TY - GEN

T1 - Tip-enhanced near-field Raman spectroscopy using an scanning tunneling microscope with side illumination optics

AU - Yi, K. J.

AU - He, X. N.

AU - Lu, Yongfeng

PY - 2008/3/31

Y1 - 2008/3/31

N2 - Raman spectroscopy (RS) is a key tool to characterize residual stress in silicon devices because the vibrational frequencies of a silicon substrate change with its stress. However, due to the intrinsic optical diffraction limit, conventional micro-Raman spectroscopy can only have a probe resolution of around 1 μm2, which is not sufficient for nanotechnology-oriented electronic industry. Low sensitivity is another problem to be solved to maximize the potential of this technique. In this study, a novel Raman spectrometer, which can overcome the optical diffraction limit, was built with the attempt to improve the resolution as well as the detection sensitivity. This approach instrument, which is based upon tip-enhanced near-field effects, has a nanoscale resolution by deploying a silver-coated tungsten tip mounted on a scanning tunneling microscope (STM) with side illumination optics. It features fast and reliable optical alignment, versatile sample adaptability and effective far-field signal suppression. The performance was evaluated by observing the enhancement effects on silicon substrates and single-walled carbon nanotubes (SWCNTs). It was found that apparent enhancement as high as 120% on silicon substrates could be achieved using the depolarization technique. It is believed that this technique is promising for future diagnosis of semiconductor materials and devices at nanoscales, especially for stress mapping of semiconductor devices.

AB - Raman spectroscopy (RS) is a key tool to characterize residual stress in silicon devices because the vibrational frequencies of a silicon substrate change with its stress. However, due to the intrinsic optical diffraction limit, conventional micro-Raman spectroscopy can only have a probe resolution of around 1 μm2, which is not sufficient for nanotechnology-oriented electronic industry. Low sensitivity is another problem to be solved to maximize the potential of this technique. In this study, a novel Raman spectrometer, which can overcome the optical diffraction limit, was built with the attempt to improve the resolution as well as the detection sensitivity. This approach instrument, which is based upon tip-enhanced near-field effects, has a nanoscale resolution by deploying a silver-coated tungsten tip mounted on a scanning tunneling microscope (STM) with side illumination optics. It features fast and reliable optical alignment, versatile sample adaptability and effective far-field signal suppression. The performance was evaluated by observing the enhancement effects on silicon substrates and single-walled carbon nanotubes (SWCNTs). It was found that apparent enhancement as high as 120% on silicon substrates could be achieved using the depolarization technique. It is believed that this technique is promising for future diagnosis of semiconductor materials and devices at nanoscales, especially for stress mapping of semiconductor devices.

KW - Apparent enhancement factor

KW - Far-field

KW - Near-field

KW - Scanning tunneling microscope

KW - Silicon devices

KW - Tip-enhanced Raman spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=41149174648&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41149174648&partnerID=8YFLogxK

U2 - 10.1117/12.762183

DO - 10.1117/12.762183

M3 - Conference contribution

SN - 9780819470553

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Laser-based Micro- and Nanopackaging and Assembly II

ER -