Thickness analysis of silicon membranes for stencil masks

E. Sossna, R. Kassing, I. W. Rangelow, C. M. Herzinger, T. E. Tiwald, J. A. Woollam, Th Wagner

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

A technique to measure thickness uniformity and thermal emissive control for high quality masks, with adequate accuracy and precision is demonstrated. It is based on infrared variable angle spectroscopic ellipsometry (IR-VASE). Refractive index and the thickness of silicon membrane was determined. Depth profile of the optical constants and of the concentration of free carriers in membranes was also evaluated.

Original languageEnglish (US)
Pages (from-to)3259-3263
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume18
Issue number6
DOIs
StatePublished - Nov 1 2000
Event44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA
Duration: May 30 2000Jun 2 2000

Fingerprint

Masks
masks
membranes
Membranes
Silicon
Optical constants
Spectroscopic ellipsometry
silicon
ellipsometry
Refractive index
refractivity
Infrared radiation
profiles
Hot Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Thickness analysis of silicon membranes for stencil masks. / Sossna, E.; Kassing, R.; Rangelow, I. W.; Herzinger, C. M.; Tiwald, T. E.; Woollam, J. A.; Wagner, Th.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 18, No. 6, 01.11.2000, p. 3259-3263.

Research output: Contribution to journalConference article

Sossna, E. ; Kassing, R. ; Rangelow, I. W. ; Herzinger, C. M. ; Tiwald, T. E. ; Woollam, J. A. ; Wagner, Th. / Thickness analysis of silicon membranes for stencil masks. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2000 ; Vol. 18, No. 6. pp. 3259-3263.
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