Thermochemical dry etching of single crystal ferrite by laser irradiation in CCl4 gas atmosphere

M. Takai, Y. F. Lu, T. Koizumi, S. Namba, S. Nagatomo

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Single crystal ferrite has been etched by focused Ar+ laser irradiation in a CCl4 gas atmosphere. The etched groove showed cracks due to thermal stresses when samples were etched by a laser vaporization process in a vacuum, while in a CCl4 atmosphere, such cracks were not observed. An etching rate of 68 μ/s obtained for a thermochemical process by laser irradiation was four orders of magnitude higher than that for a wet chemical etching process. A high aspect (depth-to-width) ratio of up to 10 was obtained for etched grooves. Under specific conditions, bending of the groove and orientation dependence in etching rate were observed.

Original languageEnglish (US)
Pages (from-to)197-205
Number of pages9
JournalApplied Physics A Solids and Surfaces
Volume46
Issue number3
DOIs
StatePublished - Jul 1 1988

Fingerprint

Dry etching
Laser beam effects
grooves
Ferrite
ferrites
Etching
Gases
etching
Single crystals
Cracks
atmospheres
irradiation
Wet etching
single crystals
cracks
Vaporization
gases
Thermal stress
lasers
Vacuum

Keywords

  • 81.40
  • 82.65

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Thermochemical dry etching of single crystal ferrite by laser irradiation in CCl4 gas atmosphere. / Takai, M.; Lu, Y. F.; Koizumi, T.; Namba, S.; Nagatomo, S.

In: Applied Physics A Solids and Surfaces, Vol. 46, No. 3, 01.07.1988, p. 197-205.

Research output: Contribution to journalArticle

@article{02f07c844263491384faf8c79a8c9546,
title = "Thermochemical dry etching of single crystal ferrite by laser irradiation in CCl4 gas atmosphere",
abstract = "Single crystal ferrite has been etched by focused Ar+ laser irradiation in a CCl4 gas atmosphere. The etched groove showed cracks due to thermal stresses when samples were etched by a laser vaporization process in a vacuum, while in a CCl4 atmosphere, such cracks were not observed. An etching rate of 68 μ/s obtained for a thermochemical process by laser irradiation was four orders of magnitude higher than that for a wet chemical etching process. A high aspect (depth-to-width) ratio of up to 10 was obtained for etched grooves. Under specific conditions, bending of the groove and orientation dependence in etching rate were observed.",
keywords = "81.40, 82.65",
author = "M. Takai and Lu, {Y. F.} and T. Koizumi and S. Namba and S. Nagatomo",
year = "1988",
month = "7",
day = "1",
doi = "10.1007/BF00939264",
language = "English (US)",
volume = "46",
pages = "197--205",
journal = "Applied Physics A Solids and Surfaces",
issn = "0721-7250",
number = "3",

}

TY - JOUR

T1 - Thermochemical dry etching of single crystal ferrite by laser irradiation in CCl4 gas atmosphere

AU - Takai, M.

AU - Lu, Y. F.

AU - Koizumi, T.

AU - Namba, S.

AU - Nagatomo, S.

PY - 1988/7/1

Y1 - 1988/7/1

N2 - Single crystal ferrite has been etched by focused Ar+ laser irradiation in a CCl4 gas atmosphere. The etched groove showed cracks due to thermal stresses when samples were etched by a laser vaporization process in a vacuum, while in a CCl4 atmosphere, such cracks were not observed. An etching rate of 68 μ/s obtained for a thermochemical process by laser irradiation was four orders of magnitude higher than that for a wet chemical etching process. A high aspect (depth-to-width) ratio of up to 10 was obtained for etched grooves. Under specific conditions, bending of the groove and orientation dependence in etching rate were observed.

AB - Single crystal ferrite has been etched by focused Ar+ laser irradiation in a CCl4 gas atmosphere. The etched groove showed cracks due to thermal stresses when samples were etched by a laser vaporization process in a vacuum, while in a CCl4 atmosphere, such cracks were not observed. An etching rate of 68 μ/s obtained for a thermochemical process by laser irradiation was four orders of magnitude higher than that for a wet chemical etching process. A high aspect (depth-to-width) ratio of up to 10 was obtained for etched grooves. Under specific conditions, bending of the groove and orientation dependence in etching rate were observed.

KW - 81.40

KW - 82.65

UR - http://www.scopus.com/inward/record.url?scp=0024047515&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0024047515&partnerID=8YFLogxK

U2 - 10.1007/BF00939264

DO - 10.1007/BF00939264

M3 - Article

AN - SCOPUS:0024047515

VL - 46

SP - 197

EP - 205

JO - Applied Physics A Solids and Surfaces

JF - Applied Physics A Solids and Surfaces

SN - 0721-7250

IS - 3

ER -