Thermal stability of carbon nitride thin films prepared by electron cyclotron resonance plasma assisted pulsed laser deposition

Z. B. Dong, Yongfeng Lu, K. Gao, L. Q. Shi, J. Sun, N. Xu, J. D. Wu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Carbon nitride (CNx) thin films with high nitrogen content were deposited on Si (100) substrates by using electron cyclotron resonance nitrogen plasma assisted pulsed laser deposition (ECR-PLD), and their thermal stability were studied by examining their composition and bonding behaviors upon post-deposition heat annealing in vacuum and in nitrogen ambient. The as-deposited films contain nitrogen content varying around 50 at.% and are primarily amorphous containing several bonding configurations between carbon and nitrogen atoms with different bond components depending on bias voltage applied to the substrates. In addition to the D, G and L Raman bands reported for most CNx thin films, three prominent Raman peaks were observed at 170, 260 and 616 cm- 1 from our as-deposited films. Composition analysis by Rutherford backscattering spectroscopy measurement and chemical structure characterization by Fourier Transform infrared spectroscopy and Raman scattering measurements showed that the ECR-PLD deposited CNx thin films are quite stable upon annealing in vacuum up to 750 °C. The CNx films exhibit even higher thermal stability in nitrogen ambient.

Original languageEnglish (US)
Pages (from-to)8594-8598
Number of pages5
JournalThin Solid Films
Volume516
Issue number23
DOIs
StatePublished - Oct 1 2008

Fingerprint

Electron cyclotron resonance
carbon nitrides
Carbon nitride
Pulsed laser deposition
electron cyclotron resonance
pulsed laser deposition
Thermodynamic stability
thermal stability
Nitrogen
Plasmas
nitrogen
Thin films
nitrogen plasma
Nitrogen plasma
thin films
vacuum
annealing
Vacuum
Annealing
nitrogen atoms

Keywords

  • Carbon nitride
  • ECR plasma
  • Heat annealing
  • Plasma assisted pulsed laser deposition
  • Thermal stability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Thermal stability of carbon nitride thin films prepared by electron cyclotron resonance plasma assisted pulsed laser deposition. / Dong, Z. B.; Lu, Yongfeng; Gao, K.; Shi, L. Q.; Sun, J.; Xu, N.; Wu, J. D.

In: Thin Solid Films, Vol. 516, No. 23, 01.10.2008, p. 8594-8598.

Research output: Contribution to journalArticle

Dong, Z. B. ; Lu, Yongfeng ; Gao, K. ; Shi, L. Q. ; Sun, J. ; Xu, N. ; Wu, J. D. / Thermal stability of carbon nitride thin films prepared by electron cyclotron resonance plasma assisted pulsed laser deposition. In: Thin Solid Films. 2008 ; Vol. 516, No. 23. pp. 8594-8598.
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AB - Carbon nitride (CNx) thin films with high nitrogen content were deposited on Si (100) substrates by using electron cyclotron resonance nitrogen plasma assisted pulsed laser deposition (ECR-PLD), and their thermal stability were studied by examining their composition and bonding behaviors upon post-deposition heat annealing in vacuum and in nitrogen ambient. The as-deposited films contain nitrogen content varying around 50 at.% and are primarily amorphous containing several bonding configurations between carbon and nitrogen atoms with different bond components depending on bias voltage applied to the substrates. In addition to the D, G and L Raman bands reported for most CNx thin films, three prominent Raman peaks were observed at 170, 260 and 616 cm- 1 from our as-deposited films. Composition analysis by Rutherford backscattering spectroscopy measurement and chemical structure characterization by Fourier Transform infrared spectroscopy and Raman scattering measurements showed that the ECR-PLD deposited CNx thin films are quite stable upon annealing in vacuum up to 750 °C. The CNx films exhibit even higher thermal stability in nitrogen ambient.

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