Thermal and structural stability of cosputtered amorphous Ta xCu1-x alloy thin films on GaAs

J. E. Oh, J. A. Woollam, K. D. Aylesworth, D. J. Sellmyer, J. J. Pouch

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The thermal and chemical stabilities of amorphous-metal diffusion barrier films are of importance in high-temperature semiconductor device applications. The reaction characteristics of the barrier constituents with the surrounding elements as well as the crystallization temperature determine the thermal stability of an amorphous-alloy diffusion barrier. We report that suitable thin films of Ta-Cu have been prepared over a wide range of compositions, by cosputter deposition onto GaAs and fused-quartz substrates. The amorphous nature and crystallization behavior of the films have been monitored by x-ray diffraction and van der Pauw resistivity measurements. Films were found to be amorphous over the range of 55-95 at. % Ta. In addition, Auger electron spectroscopy surveys and depth profiles were used to investigate the various interdiffusion reactions between the amorphous diffusion barrier, polycrystalline Au overlayers, and GaAs substrates. Barriers of Ta 93Cu7 are remarkably effective in preventing Au in-diffusion, a 3000-Å layer remaining unpenetrated after an annealing at 700°C for 20 min. Diffusion of Ga and/or As into amorphous 93 at. % Ta is more rapid than that of Au. Interfacial reactions formed Ta3Au, CuAu, TaAs2, Ga3Cu7, Cu3As, and other unidentified compounds formed above 700°C.

Original languageEnglish (US)
Pages (from-to)4281-4286
Number of pages6
JournalJournal of Applied Physics
Volume60
Issue number12
DOIs
StatePublished - Dec 1 1986

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structural stability
thermal stability
thin films
crystallization
semiconductor devices
Auger spectroscopy
electron spectroscopy
x ray diffraction
quartz
electrical resistivity
annealing
profiles
metals
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Thermal and structural stability of cosputtered amorphous Ta xCu1-x alloy thin films on GaAs. / Oh, J. E.; Woollam, J. A.; Aylesworth, K. D.; Sellmyer, D. J.; Pouch, J. J.

In: Journal of Applied Physics, Vol. 60, No. 12, 01.12.1986, p. 4281-4286.

Research output: Contribution to journalArticle

@article{163e39f9fb5849c788b5242490d2aa11,
title = "Thermal and structural stability of cosputtered amorphous Ta xCu1-x alloy thin films on GaAs",
abstract = "The thermal and chemical stabilities of amorphous-metal diffusion barrier films are of importance in high-temperature semiconductor device applications. The reaction characteristics of the barrier constituents with the surrounding elements as well as the crystallization temperature determine the thermal stability of an amorphous-alloy diffusion barrier. We report that suitable thin films of Ta-Cu have been prepared over a wide range of compositions, by cosputter deposition onto GaAs and fused-quartz substrates. The amorphous nature and crystallization behavior of the films have been monitored by x-ray diffraction and van der Pauw resistivity measurements. Films were found to be amorphous over the range of 55-95 at. {\%} Ta. In addition, Auger electron spectroscopy surveys and depth profiles were used to investigate the various interdiffusion reactions between the amorphous diffusion barrier, polycrystalline Au overlayers, and GaAs substrates. Barriers of Ta 93Cu7 are remarkably effective in preventing Au in-diffusion, a 3000-{\AA} layer remaining unpenetrated after an annealing at 700°C for 20 min. Diffusion of Ga and/or As into amorphous 93 at. {\%} Ta is more rapid than that of Au. Interfacial reactions formed Ta3Au, CuAu, TaAs2, Ga3Cu7, Cu3As, and other unidentified compounds formed above 700°C.",
author = "Oh, {J. E.} and Woollam, {J. A.} and Aylesworth, {K. D.} and Sellmyer, {D. J.} and Pouch, {J. J.}",
year = "1986",
month = "12",
day = "1",
doi = "10.1063/1.337470",
language = "English (US)",
volume = "60",
pages = "4281--4286",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Thermal and structural stability of cosputtered amorphous Ta xCu1-x alloy thin films on GaAs

AU - Oh, J. E.

AU - Woollam, J. A.

AU - Aylesworth, K. D.

AU - Sellmyer, D. J.

AU - Pouch, J. J.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - The thermal and chemical stabilities of amorphous-metal diffusion barrier films are of importance in high-temperature semiconductor device applications. The reaction characteristics of the barrier constituents with the surrounding elements as well as the crystallization temperature determine the thermal stability of an amorphous-alloy diffusion barrier. We report that suitable thin films of Ta-Cu have been prepared over a wide range of compositions, by cosputter deposition onto GaAs and fused-quartz substrates. The amorphous nature and crystallization behavior of the films have been monitored by x-ray diffraction and van der Pauw resistivity measurements. Films were found to be amorphous over the range of 55-95 at. % Ta. In addition, Auger electron spectroscopy surveys and depth profiles were used to investigate the various interdiffusion reactions between the amorphous diffusion barrier, polycrystalline Au overlayers, and GaAs substrates. Barriers of Ta 93Cu7 are remarkably effective in preventing Au in-diffusion, a 3000-Å layer remaining unpenetrated after an annealing at 700°C for 20 min. Diffusion of Ga and/or As into amorphous 93 at. % Ta is more rapid than that of Au. Interfacial reactions formed Ta3Au, CuAu, TaAs2, Ga3Cu7, Cu3As, and other unidentified compounds formed above 700°C.

AB - The thermal and chemical stabilities of amorphous-metal diffusion barrier films are of importance in high-temperature semiconductor device applications. The reaction characteristics of the barrier constituents with the surrounding elements as well as the crystallization temperature determine the thermal stability of an amorphous-alloy diffusion barrier. We report that suitable thin films of Ta-Cu have been prepared over a wide range of compositions, by cosputter deposition onto GaAs and fused-quartz substrates. The amorphous nature and crystallization behavior of the films have been monitored by x-ray diffraction and van der Pauw resistivity measurements. Films were found to be amorphous over the range of 55-95 at. % Ta. In addition, Auger electron spectroscopy surveys and depth profiles were used to investigate the various interdiffusion reactions between the amorphous diffusion barrier, polycrystalline Au overlayers, and GaAs substrates. Barriers of Ta 93Cu7 are remarkably effective in preventing Au in-diffusion, a 3000-Å layer remaining unpenetrated after an annealing at 700°C for 20 min. Diffusion of Ga and/or As into amorphous 93 at. % Ta is more rapid than that of Au. Interfacial reactions formed Ta3Au, CuAu, TaAs2, Ga3Cu7, Cu3As, and other unidentified compounds formed above 700°C.

UR - http://www.scopus.com/inward/record.url?scp=33748849697&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748849697&partnerID=8YFLogxK

U2 - 10.1063/1.337470

DO - 10.1063/1.337470

M3 - Article

AN - SCOPUS:33748849697

VL - 60

SP - 4281

EP - 4286

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

ER -