Theory of porous silicon injection electroluminescence

H. Paul Maruska, Fereydoon Namavar, N. M. Kalkhoran

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We discuss the operation of porous silicon light-emitting diodes prepared as heterojunctions between n-type In2O3:Sn (ITO) and p-type silicon nanostructures, exhibiting quantum confinement effects. The transparent ITO affords light emission through the top surface of the device, as well as providing passivation and hence long term stability. We describe a model for the injection of minority carrier electrons into the porous silicon regions, which results in the emission of yellow-orange DC electroluminescence. A detailed study of the forward bias current-voltage characteristics of the devices will be given, which allows calculations of the densities of interface states. A tendency to pin the hole Fermi energy near the neutral level, φ0, is shown to control the extraction of majority carriers. Methods for improving LED efficiency by alleviating a parasitic shunt current path through interface states will be addressed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages383-388
Number of pages6
ISBN (Print)1558991786
StatePublished - Jan 1 1993
EventProceedings of the Second Symposium on Dynamics in Small Confining Systems - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume283
ISSN (Print)0272-9172

Other

OtherProceedings of the Second Symposium on Dynamics in Small Confining Systems
CityBoston, MA, USA
Period11/30/9212/4/92

Fingerprint

Interface states
Porous silicon
Electroluminescence
Light emitting diodes
Quantum confinement
Bias currents
Light emission
Silicon
Current voltage characteristics
Fermi level
Passivation
Heterojunctions
Nanostructures
Electrons

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Maruska, H. P., Namavar, F., & Kalkhoran, N. M. (1993). Theory of porous silicon injection electroluminescence. In Materials Research Society Symposium Proceedings (pp. 383-388). (Materials Research Society Symposium Proceedings; Vol. 283). Publ by Materials Research Society.

Theory of porous silicon injection electroluminescence. / Maruska, H. Paul; Namavar, Fereydoon; Kalkhoran, N. M.

Materials Research Society Symposium Proceedings. Publ by Materials Research Society, 1993. p. 383-388 (Materials Research Society Symposium Proceedings; Vol. 283).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Maruska, HP, Namavar, F & Kalkhoran, NM 1993, Theory of porous silicon injection electroluminescence. in Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 283, Publ by Materials Research Society, pp. 383-388, Proceedings of the Second Symposium on Dynamics in Small Confining Systems, Boston, MA, USA, 11/30/92.
Maruska HP, Namavar F, Kalkhoran NM. Theory of porous silicon injection electroluminescence. In Materials Research Society Symposium Proceedings. Publ by Materials Research Society. 1993. p. 383-388. (Materials Research Society Symposium Proceedings).
Maruska, H. Paul ; Namavar, Fereydoon ; Kalkhoran, N. M. / Theory of porous silicon injection electroluminescence. Materials Research Society Symposium Proceedings. Publ by Materials Research Society, 1993. pp. 383-388 (Materials Research Society Symposium Proceedings).
@inproceedings{3a9e987d751a48208672fc1477251682,
title = "Theory of porous silicon injection electroluminescence",
abstract = "We discuss the operation of porous silicon light-emitting diodes prepared as heterojunctions between n-type In2O3:Sn (ITO) and p-type silicon nanostructures, exhibiting quantum confinement effects. The transparent ITO affords light emission through the top surface of the device, as well as providing passivation and hence long term stability. We describe a model for the injection of minority carrier electrons into the porous silicon regions, which results in the emission of yellow-orange DC electroluminescence. A detailed study of the forward bias current-voltage characteristics of the devices will be given, which allows calculations of the densities of interface states. A tendency to pin the hole Fermi energy near the neutral level, φ0, is shown to control the extraction of majority carriers. Methods for improving LED efficiency by alleviating a parasitic shunt current path through interface states will be addressed.",
author = "Maruska, {H. Paul} and Fereydoon Namavar and Kalkhoran, {N. M.}",
year = "1993",
month = "1",
day = "1",
language = "English (US)",
isbn = "1558991786",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "383--388",
booktitle = "Materials Research Society Symposium Proceedings",

}

TY - GEN

T1 - Theory of porous silicon injection electroluminescence

AU - Maruska, H. Paul

AU - Namavar, Fereydoon

AU - Kalkhoran, N. M.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - We discuss the operation of porous silicon light-emitting diodes prepared as heterojunctions between n-type In2O3:Sn (ITO) and p-type silicon nanostructures, exhibiting quantum confinement effects. The transparent ITO affords light emission through the top surface of the device, as well as providing passivation and hence long term stability. We describe a model for the injection of minority carrier electrons into the porous silicon regions, which results in the emission of yellow-orange DC electroluminescence. A detailed study of the forward bias current-voltage characteristics of the devices will be given, which allows calculations of the densities of interface states. A tendency to pin the hole Fermi energy near the neutral level, φ0, is shown to control the extraction of majority carriers. Methods for improving LED efficiency by alleviating a parasitic shunt current path through interface states will be addressed.

AB - We discuss the operation of porous silicon light-emitting diodes prepared as heterojunctions between n-type In2O3:Sn (ITO) and p-type silicon nanostructures, exhibiting quantum confinement effects. The transparent ITO affords light emission through the top surface of the device, as well as providing passivation and hence long term stability. We describe a model for the injection of minority carrier electrons into the porous silicon regions, which results in the emission of yellow-orange DC electroluminescence. A detailed study of the forward bias current-voltage characteristics of the devices will be given, which allows calculations of the densities of interface states. A tendency to pin the hole Fermi energy near the neutral level, φ0, is shown to control the extraction of majority carriers. Methods for improving LED efficiency by alleviating a parasitic shunt current path through interface states will be addressed.

UR - http://www.scopus.com/inward/record.url?scp=0027188760&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027188760&partnerID=8YFLogxK

M3 - Conference contribution

SN - 1558991786

T3 - Materials Research Society Symposium Proceedings

SP - 383

EP - 388

BT - Materials Research Society Symposium Proceedings

PB - Publ by Materials Research Society

ER -