Theoretical analysis of laser-induced periodic structures at silicon-dioxide/silicon and silicon-dioxide/aluminum interfaces

Y. F. Lu, J. J. Yu, W. K. Choi

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

An analytical model was established to predict the laser-induced periodic structures at silicon-dioxide/silicon and silicon-dioxide/aluminum interfaces. The freezing of surface waves is considered the dominant mechanism for ripple formation. The model precisely predicts a linear relationship between the interface periodicity and the silicon dioxide thickness. The ripple periodicity in the substrates can hence be adjusted by varying the thickness of SiO2 overlayer. This process is expected to be useful in laser microtexturing for magnetic media of high storage density, which requires microtextures to be well controlled within a certain roughness to prevent a stiction failure. The theoretical calculation has a good agreement with the experimental results.

Original languageEnglish (US)
Pages (from-to)3439-3440
Number of pages2
JournalApplied Physics Letters
Volume71
Issue number23
DOIs
StatePublished - Dec 8 1997

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silicon dioxide
aluminum
ripples
periodic variations
silicon
stiction
lasers
freezing
surface waves
roughness

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Theoretical analysis of laser-induced periodic structures at silicon-dioxide/silicon and silicon-dioxide/aluminum interfaces. / Lu, Y. F.; Yu, J. J.; Choi, W. K.

In: Applied Physics Letters, Vol. 71, No. 23, 08.12.1997, p. 3439-3440.

Research output: Contribution to journalArticle

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