The influence of surface terminal layer and surface defects on the electronic structure of CMR perovskites

La0.65A0.35MnO3 (A = Ca, Sr, Ba)

Jaewu Choi, Hani Dulli, Sy-Hwang Liou, P. A. Dowben, M. A. Langell

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The electronic structure near to the Fermi level of the colossal magnetoresistance (CMR) perovskite manganite materials, La0.65A0.35MnO3 (A = Ca, Sr, Ba), has been studied using both photoemission and inverse photoemission spectroscopy. The electronic structure for all three materials is very similar and consistent with an Mn - O terminal layer regardless of dopant. Small differences in the electronic structure among the materials are, however, observed. The observed band gap is not significant for La0.65Ca0.35MnO3 and La0.65Ba0.35MnO3 while there is a gap, about 1.5 eV, for La0.65Sr0.35MnO3. There is a shift to higher binding energies of the extensively hybridized Mn - O Δ5(e) bands for the surface (the surface on the Mn-O plane with C4v symmetry) and t2g bands for the bulk in the valence band spectra with increasing atomic number or atomic radius of dopants, approximately to 5.8, 6.8, and 7.8 eV for La0.65Ca0.35MnO3, La0.65Sr0.35MnO3, and La0.65Ba0.35MnO3, respectively. The O - Mn - O terminal layer in these materials seems to be much more defect free than is the case for La0.9Ca0.1MnO3, where the Ca - O terminal layer appears to be rich in defects.

Original languageEnglish (US)
Pages (from-to)45-57
Number of pages13
JournalPhysica Status Solidi (B) Basic Research
Volume214
Issue number1
DOIs
StatePublished - Jan 1 1999

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Colossal magnetoresistance
Surface defects
surface defects
perovskites
Electronic structure
electronic structure
defects
photoelectric emission
Doping (additives)
Defects
Photoemission
Photoelectron spectroscopy
Valence bands
Fermi level
Binding energy
Perovskite
Energy gap
binding energy
valence
radii

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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The influence of surface terminal layer and surface defects on the electronic structure of CMR perovskites : La0.65A0.35MnO3 (A = Ca, Sr, Ba). / Choi, Jaewu; Dulli, Hani; Liou, Sy-Hwang; Dowben, P. A.; Langell, M. A.

In: Physica Status Solidi (B) Basic Research, Vol. 214, No. 1, 01.01.1999, p. 45-57.

Research output: Contribution to journalArticle

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abstract = "The electronic structure near to the Fermi level of the colossal magnetoresistance (CMR) perovskite manganite materials, La0.65A0.35MnO3 (A = Ca, Sr, Ba), has been studied using both photoemission and inverse photoemission spectroscopy. The electronic structure for all three materials is very similar and consistent with an Mn - O terminal layer regardless of dopant. Small differences in the electronic structure among the materials are, however, observed. The observed band gap is not significant for La0.65Ca0.35MnO3 and La0.65Ba0.35MnO3 while there is a gap, about 1.5 eV, for La0.65Sr0.35MnO3. There is a shift to higher binding energies of the extensively hybridized Mn - O Δ5(e) bands for the surface (the surface on the Mn-O plane with C4v symmetry) and t2g bands for the bulk in the valence band spectra with increasing atomic number or atomic radius of dopants, approximately to 5.8, 6.8, and 7.8 eV for La0.65Ca0.35MnO3, La0.65Sr0.35MnO3, and La0.65Ba0.35MnO3, respectively. The O - Mn - O terminal layer in these materials seems to be much more defect free than is the case for La0.9Ca0.1MnO3, where the Ca - O terminal layer appears to be rich in defects.",
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T2 - La0.65A0.35MnO3 (A = Ca, Sr, Ba)

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N2 - The electronic structure near to the Fermi level of the colossal magnetoresistance (CMR) perovskite manganite materials, La0.65A0.35MnO3 (A = Ca, Sr, Ba), has been studied using both photoemission and inverse photoemission spectroscopy. The electronic structure for all three materials is very similar and consistent with an Mn - O terminal layer regardless of dopant. Small differences in the electronic structure among the materials are, however, observed. The observed band gap is not significant for La0.65Ca0.35MnO3 and La0.65Ba0.35MnO3 while there is a gap, about 1.5 eV, for La0.65Sr0.35MnO3. There is a shift to higher binding energies of the extensively hybridized Mn - O Δ5(e) bands for the surface (the surface on the Mn-O plane with C4v symmetry) and t2g bands for the bulk in the valence band spectra with increasing atomic number or atomic radius of dopants, approximately to 5.8, 6.8, and 7.8 eV for La0.65Ca0.35MnO3, La0.65Sr0.35MnO3, and La0.65Ba0.35MnO3, respectively. The O - Mn - O terminal layer in these materials seems to be much more defect free than is the case for La0.9Ca0.1MnO3, where the Ca - O terminal layer appears to be rich in defects.

AB - The electronic structure near to the Fermi level of the colossal magnetoresistance (CMR) perovskite manganite materials, La0.65A0.35MnO3 (A = Ca, Sr, Ba), has been studied using both photoemission and inverse photoemission spectroscopy. The electronic structure for all three materials is very similar and consistent with an Mn - O terminal layer regardless of dopant. Small differences in the electronic structure among the materials are, however, observed. The observed band gap is not significant for La0.65Ca0.35MnO3 and La0.65Ba0.35MnO3 while there is a gap, about 1.5 eV, for La0.65Sr0.35MnO3. There is a shift to higher binding energies of the extensively hybridized Mn - O Δ5(e) bands for the surface (the surface on the Mn-O plane with C4v symmetry) and t2g bands for the bulk in the valence band spectra with increasing atomic number or atomic radius of dopants, approximately to 5.8, 6.8, and 7.8 eV for La0.65Ca0.35MnO3, La0.65Sr0.35MnO3, and La0.65Ba0.35MnO3, respectively. The O - Mn - O terminal layer in these materials seems to be much more defect free than is the case for La0.9Ca0.1MnO3, where the Ca - O terminal layer appears to be rich in defects.

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