The inertial-mass scale for free-charge-carriers in semiconductor heterostructures

T. Hofmann, Mathias Schubert, C. Von Middendorff, G. Leibiger, V. Gottschalch, C. M. Herzinger, A. Lindsay, E. O'Reilly

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Generalized magnetooptic Mueller matrix ellipsometry at far-infrared wavelengths is presented for optical determination of free-charge-carrier properties in complex-layered semiconductor heterostructures. Upon model analysis of the ellipsometry data we obtain access to the free-charge-carrier density, inertial ("effective") mass, and mobility parameters of the individual material constituents, and within heterostructures composed of multiple layers. Our approach is demonstrated exemplarily for BInGaAs, a material of contemporary interest for multiple-junction solar cell structures, where a dramatic increase of the Γ-point conduction band effective mass is reported.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages455-456
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

Fingerprint

ellipsometry
charge carriers
conduction bands
solar cells
matrices
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Hofmann, T., Schubert, M., Von Middendorff, C., Leibiger, G., Gottschalch, V., Herzinger, C. M., ... O'Reilly, E. (2005). The inertial-mass scale for free-charge-carriers in semiconductor heterostructures. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 455-456). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994180

The inertial-mass scale for free-charge-carriers in semiconductor heterostructures. / Hofmann, T.; Schubert, Mathias; Von Middendorff, C.; Leibiger, G.; Gottschalch, V.; Herzinger, C. M.; Lindsay, A.; O'Reilly, E.

PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 455-456 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hofmann, T, Schubert, M, Von Middendorff, C, Leibiger, G, Gottschalch, V, Herzinger, CM, Lindsay, A & O'Reilly, E 2005, The inertial-mass scale for free-charge-carriers in semiconductor heterostructures. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 455-456, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1994180
Hofmann T, Schubert M, Von Middendorff C, Leibiger G, Gottschalch V, Herzinger CM et al. The inertial-mass scale for free-charge-carriers in semiconductor heterostructures. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 455-456. (AIP Conference Proceedings). https://doi.org/10.1063/1.1994180
Hofmann, T. ; Schubert, Mathias ; Von Middendorff, C. ; Leibiger, G. ; Gottschalch, V. ; Herzinger, C. M. ; Lindsay, A. ; O'Reilly, E. / The inertial-mass scale for free-charge-carriers in semiconductor heterostructures. PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. pp. 455-456 (AIP Conference Proceedings).
@inproceedings{6e3e22be2249447aa00d3a0ee0c9b045,
title = "The inertial-mass scale for free-charge-carriers in semiconductor heterostructures",
abstract = "Generalized magnetooptic Mueller matrix ellipsometry at far-infrared wavelengths is presented for optical determination of free-charge-carrier properties in complex-layered semiconductor heterostructures. Upon model analysis of the ellipsometry data we obtain access to the free-charge-carrier density, inertial ({"}effective{"}) mass, and mobility parameters of the individual material constituents, and within heterostructures composed of multiple layers. Our approach is demonstrated exemplarily for BInGaAs, a material of contemporary interest for multiple-junction solar cell structures, where a dramatic increase of the Γ-point conduction band effective mass is reported.",
author = "T. Hofmann and Mathias Schubert and {Von Middendorff}, C. and G. Leibiger and V. Gottschalch and Herzinger, {C. M.} and A. Lindsay and E. O'Reilly",
year = "2005",
month = "6",
day = "30",
doi = "10.1063/1.1994180",
language = "English (US)",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "455--456",
booktitle = "PHYSICS OF SEMICONDUCTORS",

}

TY - GEN

T1 - The inertial-mass scale for free-charge-carriers in semiconductor heterostructures

AU - Hofmann, T.

AU - Schubert, Mathias

AU - Von Middendorff, C.

AU - Leibiger, G.

AU - Gottschalch, V.

AU - Herzinger, C. M.

AU - Lindsay, A.

AU - O'Reilly, E.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - Generalized magnetooptic Mueller matrix ellipsometry at far-infrared wavelengths is presented for optical determination of free-charge-carrier properties in complex-layered semiconductor heterostructures. Upon model analysis of the ellipsometry data we obtain access to the free-charge-carrier density, inertial ("effective") mass, and mobility parameters of the individual material constituents, and within heterostructures composed of multiple layers. Our approach is demonstrated exemplarily for BInGaAs, a material of contemporary interest for multiple-junction solar cell structures, where a dramatic increase of the Γ-point conduction band effective mass is reported.

AB - Generalized magnetooptic Mueller matrix ellipsometry at far-infrared wavelengths is presented for optical determination of free-charge-carrier properties in complex-layered semiconductor heterostructures. Upon model analysis of the ellipsometry data we obtain access to the free-charge-carrier density, inertial ("effective") mass, and mobility parameters of the individual material constituents, and within heterostructures composed of multiple layers. Our approach is demonstrated exemplarily for BInGaAs, a material of contemporary interest for multiple-junction solar cell structures, where a dramatic increase of the Γ-point conduction band effective mass is reported.

UR - http://www.scopus.com/inward/record.url?scp=33749460463&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749460463&partnerID=8YFLogxK

U2 - 10.1063/1.1994180

DO - 10.1063/1.1994180

M3 - Conference contribution

SN - 0735402574

SN - 9780735402577

T3 - AIP Conference Proceedings

SP - 455

EP - 456

BT - PHYSICS OF SEMICONDUCTORS

ER -