The cw laser-induced temperature profile in a silicon substrate with an etched hole

T. S. Wee, Y. F. Lu, W. K. Chim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This paper describes an analytical method to deduce the steady-state, laser-induced temperature profile in an isotropic silicon substrate with a Guassian-shaped hole on its surface. Although effects of first-order specular reflection are included, the model is only applicable to holes that are not too deep. On carrying out a separate numerical finite-element analysis, the analytical method was found to be reasonably accurate. For a laser beam with a Gaussian intensity profile, it was found that the difference in results obtained by the two methods increases and then decreases as the Gaussian-shaped etched hole gets deeper. The analytical model tends to predict a lower peak temperature rise on the surface. Limitations of the analytical method are also discussed.

Original languageEnglish (US)
Pages (from-to)1293-1303
Number of pages11
JournalJournal of Physics D: Applied Physics
Volume28
Issue number7
DOIs
StatePublished - Jul 14 1995

Fingerprint

Silicon
temperature profiles
Lasers
silicon
Substrates
lasers
Laser beams
Analytical models
specular reflection
Finite element method
Temperature
laser beams
profiles
temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

The cw laser-induced temperature profile in a silicon substrate with an etched hole. / Wee, T. S.; Lu, Y. F.; Chim, W. K.

In: Journal of Physics D: Applied Physics, Vol. 28, No. 7, 14.07.1995, p. 1293-1303.

Research output: Contribution to journalArticle

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