The band structure of the quasi-one-dimensional layered semiconductor TiS3(001)

Hemian Yi, Takashi Komesu, Simeon Gilbert, Guanhua Hao, Andrew J. Yost, Alexey Lipatov, Alexander Sinitskii, Jose Avila, Chaoyu Chen, Maria C. Asensio, P. A. Dowben

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6 Citations (Scopus)

Abstract

The experimental mapping of the band structure of TiS3(001), by momentum resolution nanospot angle resolved photoemission, is presented. The experimental band structure, derived from angle-resolved photoemission, confirms that the top of the valence band is at the center of the Brillouin zone. This trichalcogenide has a rectangular surface Brillouin zone where the effective hole mass along the chain direction is -0.95 ± 0.09 me, while perpendicular to the chain direction, the magnitude of the effective hole mass is much lower at -0.37 ± 0.1 me. The placement of the valence band well below the Fermi level suggests that this is an n-type semiconductor.

Original languageEnglish (US)
Article number052102
JournalApplied Physics Letters
Volume112
Issue number5
DOIs
StatePublished - Jan 29 2018

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Brillouin zones
photoelectric emission
valence
n-type semiconductors
momentum

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Yi, H., Komesu, T., Gilbert, S., Hao, G., Yost, A. J., Lipatov, A., ... Dowben, P. A. (2018). The band structure of the quasi-one-dimensional layered semiconductor TiS3(001). Applied Physics Letters, 112(5), [052102]. https://doi.org/10.1063/1.5020054

The band structure of the quasi-one-dimensional layered semiconductor TiS3(001). / Yi, Hemian; Komesu, Takashi; Gilbert, Simeon; Hao, Guanhua; Yost, Andrew J.; Lipatov, Alexey; Sinitskii, Alexander; Avila, Jose; Chen, Chaoyu; Asensio, Maria C.; Dowben, P. A.

In: Applied Physics Letters, Vol. 112, No. 5, 052102, 29.01.2018.

Research output: Contribution to journalArticle

Yi, H, Komesu, T, Gilbert, S, Hao, G, Yost, AJ, Lipatov, A, Sinitskii, A, Avila, J, Chen, C, Asensio, MC & Dowben, PA 2018, 'The band structure of the quasi-one-dimensional layered semiconductor TiS3(001)', Applied Physics Letters, vol. 112, no. 5, 052102. https://doi.org/10.1063/1.5020054
Yi H, Komesu T, Gilbert S, Hao G, Yost AJ, Lipatov A et al. The band structure of the quasi-one-dimensional layered semiconductor TiS3(001). Applied Physics Letters. 2018 Jan 29;112(5). 052102. https://doi.org/10.1063/1.5020054
Yi, Hemian ; Komesu, Takashi ; Gilbert, Simeon ; Hao, Guanhua ; Yost, Andrew J. ; Lipatov, Alexey ; Sinitskii, Alexander ; Avila, Jose ; Chen, Chaoyu ; Asensio, Maria C. ; Dowben, P. A. / The band structure of the quasi-one-dimensional layered semiconductor TiS3(001). In: Applied Physics Letters. 2018 ; Vol. 112, No. 5.
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