The band structure of the quasi-one-dimensional layered semiconductor TiS3(001)

Hemian Yi, Takashi Komesu, Simeon Gilbert, Guanhua Hao, Andrew J. Yost, Alexey Lipatov, Alexander Sinitskii, Jose Avila, Chaoyu Chen, Maria C. Asensio, P. A. Dowben

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Abstract

The experimental mapping of the band structure of TiS3(001), by momentum resolution nanospot angle resolved photoemission, is presented. The experimental band structure, derived from angle-resolved photoemission, confirms that the top of the valence band is at the center of the Brillouin zone. This trichalcogenide has a rectangular surface Brillouin zone where the effective hole mass along the chain direction is -0.95 ± 0.09 me, while perpendicular to the chain direction, the magnitude of the effective hole mass is much lower at -0.37 ± 0.1 me. The placement of the valence band well below the Fermi level suggests that this is an n-type semiconductor.

Original languageEnglish (US)
Article number052102
JournalApplied Physics Letters
Volume112
Issue number5
DOIs
StatePublished - Jan 29 2018

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Yi, H., Komesu, T., Gilbert, S., Hao, G., Yost, A. J., Lipatov, A., Sinitskii, A., Avila, J., Chen, C., Asensio, M. C., & Dowben, P. A. (2018). The band structure of the quasi-one-dimensional layered semiconductor TiS3(001). Applied Physics Letters, 112(5), [052102]. https://doi.org/10.1063/1.5020054