Terahertz optical-Hall effect for multiple valley band materials

N-type silicon

P. Kühne, T. Hofmann, C. M. Herzinger, Mathias Schubert

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The optical-Hall effect comprises generalized ellipsometry at long wavelengths on samples with free-charge carriers placed within external magnetic fields. Measurement of the anisotropic magneto-optic response allows for the determination of the free-charge carrier properties including spatial anisotropy. In this work we employ the optical-Hall effect at terahertz frequencies for analysis of free-charge carrier properties in multiple valley band materials, for which the optical free-charge carrier contributions originate from multiple Brillouin-zone conduction or valence band minima or maxima, respectively. We investigate exemplarily the room temperature optical-Hall effect in low phosphorous-doped n-type silicon where free electrons are located in six equivalent conduction-band minima near the X-point. We simultaneously determine their free-charge carrier concentration, mobility, and longitudinal and transverse effective mass parameters.

Original languageEnglish (US)
Pages (from-to)2613-2616
Number of pages4
JournalThin Solid Films
Volume519
Issue number9
DOIs
StatePublished - Feb 28 2011

Fingerprint

Hall effect
Silicon
Charge carriers
valleys
charge carriers
silicon
Conduction bands
conduction bands
Magnetooptical effects
Ellipsometry
magneto-optics
Valence bands
Brillouin zones
free electrons
ellipsometry
Carrier concentration
Anisotropy
Magnetic fields
valence
Wavelength

Keywords

  • Anisotropic effective mass
  • Ellipsometry
  • Frequency domain
  • Optical-Hall effect
  • Silicon
  • THz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Terahertz optical-Hall effect for multiple valley band materials : N-type silicon. / Kühne, P.; Hofmann, T.; Herzinger, C. M.; Schubert, Mathias.

In: Thin Solid Films, Vol. 519, No. 9, 28.02.2011, p. 2613-2616.

Research output: Contribution to journalArticle

Kühne, P. ; Hofmann, T. ; Herzinger, C. M. ; Schubert, Mathias. / Terahertz optical-Hall effect for multiple valley band materials : N-type silicon. In: Thin Solid Films. 2011 ; Vol. 519, No. 9. pp. 2613-2616.
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