Terahertz ellipsometry using electron-beam based sources

T. Hofmann, C. M. Herzinger, U. Schade, M. Mross, J. A. Woollam, M. Schubert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The precise determination of materials' optical constants in the THz frequency domain is an important new challenge in basic research and is crucial for novel technological applications. Spectroscopic ellipsometry is known as a vital tool for the determination of the materials' dielectric function including its anisotropy. However, ellipsomethc measurements at very long wavelengths are difficult due to the lack of reliable sources of sufficient intensity and brilliance. Here we report on our recent advances to use ellipsometry in combination with different electron beam based sources in order to in investigate condensed matter samples in the frequency range from 0.1 to 8 THz. We successfully employ terahertz radiation emitted from two different tunable desktop sources (Smith-Purcell-effect source and a backward wave oscillator) in a polarizer-sample-analyzer ellipsometer scheme. We discuss and present THz range physical material properties due to bound and unbound charge resonances in semiconducting materials. This research will provide important understanding of optical properties for novel materials, inspire new designs, and accelerate development of optical Terahertz devices.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices
Pages85-90
Number of pages6
StatePublished - Sep 25 2009
EventPerformance and Reliability of Semiconductor Devices - Boston, MA, United States
Duration: Nov 30 2008Dec 3 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1108
ISSN (Print)0272-9172

Conference

ConferencePerformance and Reliability of Semiconductor Devices
CountryUnited States
CityBoston, MA
Period11/30/0812/3/08

Fingerprint

Ellipsometry
ellipsometry
Light sources
Electron beams
electron beams
Optical constants
Spectroscopic ellipsometry
Materials properties
Anisotropy
Optical properties
Radiation
Wavelength
backward waves
ellipsometers
optical materials
polarizers
analyzers
frequency ranges
oscillators
optical properties

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Hofmann, T., Herzinger, C. M., Schade, U., Mross, M., Woollam, J. A., & Schubert, M. (2009). Terahertz ellipsometry using electron-beam based sources. In Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices (pp. 85-90). (Materials Research Society Symposium Proceedings; Vol. 1108).

Terahertz ellipsometry using electron-beam based sources. / Hofmann, T.; Herzinger, C. M.; Schade, U.; Mross, M.; Woollam, J. A.; Schubert, M.

Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices. 2009. p. 85-90 (Materials Research Society Symposium Proceedings; Vol. 1108).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hofmann, T, Herzinger, CM, Schade, U, Mross, M, Woollam, JA & Schubert, M 2009, Terahertz ellipsometry using electron-beam based sources. in Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices. Materials Research Society Symposium Proceedings, vol. 1108, pp. 85-90, Performance and Reliability of Semiconductor Devices, Boston, MA, United States, 11/30/08.
Hofmann T, Herzinger CM, Schade U, Mross M, Woollam JA, Schubert M. Terahertz ellipsometry using electron-beam based sources. In Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices. 2009. p. 85-90. (Materials Research Society Symposium Proceedings).
Hofmann, T. ; Herzinger, C. M. ; Schade, U. ; Mross, M. ; Woollam, J. A. ; Schubert, M. / Terahertz ellipsometry using electron-beam based sources. Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices. 2009. pp. 85-90 (Materials Research Society Symposium Proceedings).
@inproceedings{e692cd22890f4518bfa743760eb2ad3a,
title = "Terahertz ellipsometry using electron-beam based sources",
abstract = "The precise determination of materials' optical constants in the THz frequency domain is an important new challenge in basic research and is crucial for novel technological applications. Spectroscopic ellipsometry is known as a vital tool for the determination of the materials' dielectric function including its anisotropy. However, ellipsomethc measurements at very long wavelengths are difficult due to the lack of reliable sources of sufficient intensity and brilliance. Here we report on our recent advances to use ellipsometry in combination with different electron beam based sources in order to in investigate condensed matter samples in the frequency range from 0.1 to 8 THz. We successfully employ terahertz radiation emitted from two different tunable desktop sources (Smith-Purcell-effect source and a backward wave oscillator) in a polarizer-sample-analyzer ellipsometer scheme. We discuss and present THz range physical material properties due to bound and unbound charge resonances in semiconducting materials. This research will provide important understanding of optical properties for novel materials, inspire new designs, and accelerate development of optical Terahertz devices.",
author = "T. Hofmann and Herzinger, {C. M.} and U. Schade and M. Mross and Woollam, {J. A.} and M. Schubert",
year = "2009",
month = "9",
day = "25",
language = "English (US)",
isbn = "9781605110806",
series = "Materials Research Society Symposium Proceedings",
pages = "85--90",
booktitle = "Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices",

}

TY - GEN

T1 - Terahertz ellipsometry using electron-beam based sources

AU - Hofmann, T.

AU - Herzinger, C. M.

AU - Schade, U.

AU - Mross, M.

AU - Woollam, J. A.

AU - Schubert, M.

PY - 2009/9/25

Y1 - 2009/9/25

N2 - The precise determination of materials' optical constants in the THz frequency domain is an important new challenge in basic research and is crucial for novel technological applications. Spectroscopic ellipsometry is known as a vital tool for the determination of the materials' dielectric function including its anisotropy. However, ellipsomethc measurements at very long wavelengths are difficult due to the lack of reliable sources of sufficient intensity and brilliance. Here we report on our recent advances to use ellipsometry in combination with different electron beam based sources in order to in investigate condensed matter samples in the frequency range from 0.1 to 8 THz. We successfully employ terahertz radiation emitted from two different tunable desktop sources (Smith-Purcell-effect source and a backward wave oscillator) in a polarizer-sample-analyzer ellipsometer scheme. We discuss and present THz range physical material properties due to bound and unbound charge resonances in semiconducting materials. This research will provide important understanding of optical properties for novel materials, inspire new designs, and accelerate development of optical Terahertz devices.

AB - The precise determination of materials' optical constants in the THz frequency domain is an important new challenge in basic research and is crucial for novel technological applications. Spectroscopic ellipsometry is known as a vital tool for the determination of the materials' dielectric function including its anisotropy. However, ellipsomethc measurements at very long wavelengths are difficult due to the lack of reliable sources of sufficient intensity and brilliance. Here we report on our recent advances to use ellipsometry in combination with different electron beam based sources in order to in investigate condensed matter samples in the frequency range from 0.1 to 8 THz. We successfully employ terahertz radiation emitted from two different tunable desktop sources (Smith-Purcell-effect source and a backward wave oscillator) in a polarizer-sample-analyzer ellipsometer scheme. We discuss and present THz range physical material properties due to bound and unbound charge resonances in semiconducting materials. This research will provide important understanding of optical properties for novel materials, inspire new designs, and accelerate development of optical Terahertz devices.

UR - http://www.scopus.com/inward/record.url?scp=70349286090&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70349286090&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:70349286090

SN - 9781605110806

T3 - Materials Research Society Symposium Proceedings

SP - 85

EP - 90

BT - Materials Research Society Symposium Proceedings - Performance and Reliability of Semiconductor Devices

ER -