Temperature effect for exciton dynamics in ZnCdSe/ZnSe QWs

Ji Nan Zeng, Yong Feng Lu, Yasuo Oka

Research output: Contribution to journalArticle

Abstract

Temperature dependence of photoluminescence (PL) from Zn1-xCdxSe/ZnSe Asymmetric Double Quantum Wells (ADQWs) has been studied by using time-resolved spectroscopy. With raising temperature, the different transient behaviors of exciton emission are observed. In the regime of T<40K, the linear increase of lifetimes in both QWs with temperature is interpreted according to J. Feldmann's theory. On the other hand, the nonradiative recombination process leads to decreases of lifetimes and intensities of the NW and WW excitons in the regime of T>40K. The faster decrease of lifetime of the NW exciton is assigned to the thermal-tunneling processes comparing to that of WW exciton. The thermal-tunneling process results from the electron-hole tunneling process due to the enhancement of ionization of exciton with raising temperature. The rate equations including thermal tunneling process are used to explain the experimental data.

Original languageEnglish (US)
Pages (from-to)43-46
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4426
DOIs
StatePublished - Jan 1 2002

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Keywords

  • Temperature dependence ot time-resolved photoluminescence (TRPL) spectroscopy
  • Tunneling process
  • ZnCdSe/ZnSe ADQWs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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