Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

T. Hofmann, P. Kühne, S. Schöche, Jr Tai Chen, U. Forsberg, E. Janzén, N. Ben Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, V. Darakchieva

Research output: Contribution to journalArticle

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Abstract

The temperature-dependence of free-charge carrier mobility, sheet density, and effective mass of a two-dimensional electron gas in a AlGaN/GaN heterostructure deposited on SiC substrate is determined using the THz optical Hall effect in the spectral range from 0.22 to 0.32 THz for temperatures from 1.5 to 300 K. The THz optical Hall-effect measurements are combined with room temperature mid-infrared spectroscopic ellipsometry measurements to determine the layer thickness, phonon mode, and free-charge carrier parameters of the heterostructure constituents. An increase of the electron effective mass from (0.22 ± 0.01) m 0 at 1.5 K to (0.36 ± 0.03) m 0 at 300 K is observed, which is indicative for a reduction in spatial confinement of the two-dimensional electron gas at room temperature. The temperature-dependence of the mobility and the sheet density is in good agreement with electrical measurements reported in the literature.

Original languageEnglish (US)
Article number192102
JournalApplied Physics Letters
Volume101
Issue number19
DOIs
StatePublished - Nov 5 2012

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high electron mobility transistors
electron gas
Hall effect
charge carriers
temperature dependence
room temperature
carrier mobility
electrical measurement
ellipsometry
temperature
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hofmann, T., Kühne, P., Schöche, S., Chen, J. T., Forsberg, U., Janzén, E., ... Darakchieva, V. (2012). Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures. Applied Physics Letters, 101(19), [192102]. https://doi.org/10.1063/1.4765351

Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures. / Hofmann, T.; Kühne, P.; Schöche, S.; Chen, Jr Tai; Forsberg, U.; Janzén, E.; Ben Sedrine, N.; Herzinger, C. M.; Woollam, J. A.; Schubert, M.; Darakchieva, V.

In: Applied Physics Letters, Vol. 101, No. 19, 192102, 05.11.2012.

Research output: Contribution to journalArticle

Hofmann, T, Kühne, P, Schöche, S, Chen, JT, Forsberg, U, Janzén, E, Ben Sedrine, N, Herzinger, CM, Woollam, JA, Schubert, M & Darakchieva, V 2012, 'Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures', Applied Physics Letters, vol. 101, no. 19, 192102. https://doi.org/10.1063/1.4765351
Hofmann T, Kühne P, Schöche S, Chen JT, Forsberg U, Janzén E et al. Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures. Applied Physics Letters. 2012 Nov 5;101(19). 192102. https://doi.org/10.1063/1.4765351
Hofmann, T. ; Kühne, P. ; Schöche, S. ; Chen, Jr Tai ; Forsberg, U. ; Janzén, E. ; Ben Sedrine, N. ; Herzinger, C. M. ; Woollam, J. A. ; Schubert, M. ; Darakchieva, V. / Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures. In: Applied Physics Letters. 2012 ; Vol. 101, No. 19.
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