Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO

R. Schmidt-Grund, N. Ashkenov, Mathias Schubert, W. Czakai, D. Faltermeier, G. Benndorf, H. Hochmuth, M. Lorenz, M. Grundmann

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

We report the temperature dependencies of the fundamental band-to-band transition energies, free exciton broadening, and the below-band-gap refractive index in ZnO. Spectroscopic ellipsometry data, taken from an (0001)-oriented ZnO thin film at temperatures between 5 K and 829 K, and for photon energies from 0.75 eV to 4.5 eV, are analysed by using model dielectric functions, augmented by excitonic continuum and free exciton contributions. A strong red-shift of the three wurtzite-type Γ-point transition energies is observed.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages271-272
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: Jul 24 2006Jul 28 2006

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period7/24/067/28/06

Fingerprint

optical transition
refractivity
temperature dependence
excitons
transition points
red shift
wurtzite
ellipsometry
free energy
continuums
temperature
energy
photons
thin films

Keywords

  • Band-to-band transition
  • Dielectric function
  • Electron-phonon interaction
  • Ellipsometry
  • Temperature dependence
  • ZnO

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Schmidt-Grund, R., Ashkenov, N., Schubert, M., Czakai, W., Faltermeier, D., Benndorf, G., ... Grundmann, M. (2007). Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 271-272). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2729872

Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO. / Schmidt-Grund, R.; Ashkenov, N.; Schubert, Mathias; Czakai, W.; Faltermeier, D.; Benndorf, G.; Hochmuth, H.; Lorenz, M.; Grundmann, M.

Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. p. 271-272 (AIP Conference Proceedings; Vol. 893).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Schmidt-Grund, R, Ashkenov, N, Schubert, M, Czakai, W, Faltermeier, D, Benndorf, G, Hochmuth, H, Lorenz, M & Grundmann, M 2007, Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO. in Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. AIP Conference Proceedings, vol. 893, pp. 271-272, 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 7/24/06. https://doi.org/10.1063/1.2729872
Schmidt-Grund R, Ashkenov N, Schubert M, Czakai W, Faltermeier D, Benndorf G et al. Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. p. 271-272. (AIP Conference Proceedings). https://doi.org/10.1063/1.2729872
Schmidt-Grund, R. ; Ashkenov, N. ; Schubert, Mathias ; Czakai, W. ; Faltermeier, D. ; Benndorf, G. ; Hochmuth, H. ; Lorenz, M. ; Grundmann, M. / Temperature-dependence of the refractive index and the optical transitions at the fundamental band-gap of ZnO. Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. pp. 271-272 (AIP Conference Proceedings).
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