Temperature dependence of the Raman scattering in HgBa2CuO4+δ

Q. Cai; M. Chandrasekhar; H. R. Chandrasekhar; U. Venkateswaran; Sy-Hwang Liou; R. Li

doi:10.1016/S0038-1098(00)00515-9

Temperature dependence of the Raman scattering in HgBa₂CuO_4+δ

Q. Cai, M. Chandrasekhar, H. R. Chandrasekhar, U. Venkateswaran, Sy-Hwang Liou, R. Li

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

The temperature dependence of the high frequency Raman mode in HgBa₂CuO_4+δ belonging to the vibrations of the apical oxygen has been studied in the temperature range of 300-10 K in samples with different values of δ. The frequency, linewidth, and lineshape of this mode are found to exhibit a non-monotonic variation with temperature. The trends in the temperature dependent variation are found to be qualitatively the same in over-, under-, and optimally oxygen doped samples, although there are quantitative sample dependent differences. We show that the maximum change in the frequency and the asymmetry of this peak are linear in the excess oxygen content, δ.

Original language	English (US)
Pages (from-to)	685-690
Number of pages	6
Journal	Solid State Communications
Volume	117
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1098(00)00515-9
State	Published - Mar 6 2001

Fingerprint

Raman scattering

Raman spectra

temperature dependence

oxygen

Oxygen

Temperature

temperature

asymmetry

Linewidth

trends

vibration

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Cite this

Cai, Q., Chandrasekhar, M., Chandrasekhar, H. R., Venkateswaran, U., Liou, S-H., & Li, R. (2001). Temperature dependence of the Raman scattering in HgBa₂CuO_4+δ. Solid State Communications, 117(11), 685-690. https://doi.org/10.1016/S0038-1098(00)00515-9

Temperature dependence of the Raman scattering in HgBa₂CuO_4+δ. / Cai, Q.; Chandrasekhar, M.; Chandrasekhar, H. R.; Venkateswaran, U.; Liou, Sy-Hwang; Li, R.

In: Solid State Communications, Vol. 117, No. 11, 06.03.2001, p. 685-690.

Research output: Contribution to journal › Article

Cai, Q, Chandrasekhar, M, Chandrasekhar, HR, Venkateswaran, U, Liou, S-H & Li, R 2001, 'Temperature dependence of the Raman scattering in HgBa₂CuO_4+δ', Solid State Communications, vol. 117, no. 11, pp. 685-690. https://doi.org/10.1016/S0038-1098(00)00515-9

Cai Q, Chandrasekhar M, Chandrasekhar HR, Venkateswaran U, Liou S-H, Li R. Temperature dependence of the Raman scattering in HgBa₂CuO_4+δ. Solid State Communications. 2001 Mar 6;117(11):685-690. https://doi.org/10.1016/S0038-1098(00)00515-9

Cai, Q. ; Chandrasekhar, M. ; Chandrasekhar, H. R. ; Venkateswaran, U. ; Liou, Sy-Hwang ; Li, R. / Temperature dependence of the Raman scattering in HgBa₂CuO_4+δ. In: Solid State Communications. 2001 ; Vol. 117, No. 11. pp. 685-690.

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Access to Document

10.1016/S0038-1098(00)00515-9