Temperature dependence of the Raman scattering in HgBa2CuO4+δ

Q. Cai, M. Chandrasekhar, H. R. Chandrasekhar, U. Venkateswaran, Sy-Hwang Liou, R. Li

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The temperature dependence of the high frequency Raman mode in HgBa2CuO4+δ belonging to the vibrations of the apical oxygen has been studied in the temperature range of 300-10 K in samples with different values of δ. The frequency, linewidth, and lineshape of this mode are found to exhibit a non-monotonic variation with temperature. The trends in the temperature dependent variation are found to be qualitatively the same in over-, under-, and optimally oxygen doped samples, although there are quantitative sample dependent differences. We show that the maximum change in the frequency and the asymmetry of this peak are linear in the excess oxygen content, δ.

Original languageEnglish (US)
Pages (from-to)685-690
Number of pages6
JournalSolid State Communications
Volume117
Issue number11
DOIs
StatePublished - Mar 6 2001

Fingerprint

Raman scattering
Raman spectra
temperature dependence
oxygen
Oxygen
Temperature
temperature
asymmetry
Linewidth
trends
vibration

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Cai, Q., Chandrasekhar, M., Chandrasekhar, H. R., Venkateswaran, U., Liou, S-H., & Li, R. (2001). Temperature dependence of the Raman scattering in HgBa2CuO4+δ. Solid State Communications, 117(11), 685-690. https://doi.org/10.1016/S0038-1098(00)00515-9

Temperature dependence of the Raman scattering in HgBa2CuO4+δ. / Cai, Q.; Chandrasekhar, M.; Chandrasekhar, H. R.; Venkateswaran, U.; Liou, Sy-Hwang; Li, R.

In: Solid State Communications, Vol. 117, No. 11, 06.03.2001, p. 685-690.

Research output: Contribution to journalArticle

Cai, Q, Chandrasekhar, M, Chandrasekhar, HR, Venkateswaran, U, Liou, S-H & Li, R 2001, 'Temperature dependence of the Raman scattering in HgBa2CuO4+δ', Solid State Communications, vol. 117, no. 11, pp. 685-690. https://doi.org/10.1016/S0038-1098(00)00515-9
Cai Q, Chandrasekhar M, Chandrasekhar HR, Venkateswaran U, Liou S-H, Li R. Temperature dependence of the Raman scattering in HgBa2CuO4+δ. Solid State Communications. 2001 Mar 6;117(11):685-690. https://doi.org/10.1016/S0038-1098(00)00515-9
Cai, Q. ; Chandrasekhar, M. ; Chandrasekhar, H. R. ; Venkateswaran, U. ; Liou, Sy-Hwang ; Li, R. / Temperature dependence of the Raman scattering in HgBa2CuO4+δ. In: Solid State Communications. 2001 ; Vol. 117, No. 11. pp. 685-690.
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