Temperature dependence of magnetoresistance in magnetic tunnel junctions with different free layer structures

L. Yuan, Sy-Hwang Liou, Dexin Wang

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33 Citations (Scopus)

Abstract

The temperature and bias voltage dependence of magnetoresistance and the resistance of two types of magnetic tunnel junction (MTJ) samples were studied. These two types of MTJ samples have different free layer structures, while having the same pinned layer structures and with the same material for free and reference layers. The layer structure for type 1 MTJs is 80Ru 8CoFeB 15 Al2 O3 50CoFeB 9Ru 54FeCo 350CrMnPt (in angstroms). The layer structure for type 2 MTJs is 80Ru 40CoFeB 50RuTa 40CoFeB 15 Al2 O3 50CoFeB 9Ru 54FeCo 350CrMnPt. The tunneling magnetoresistance (TMR) ratio [(RAP RP) RP] is about 26% and 69% at room temperature for type 1 and type 2 MTJs, respectively. A TMR as high as 107% has been observed for type 2 MTJ samples at 13 K. By analysis of the voltage and temperature dependence of the resistance and magnetoresistance in these MTJs, we discuss the effects of the magnetic behavior of the free layers, barrier qualities, and barrier interfaces. The results clearly indicate that the micromagnetization orientation at the interface between the free layer and the barrier layer is one of the important factors that determines the TMR ratio.

Original languageEnglish (US)
Article number134403
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume73
Issue number13
DOIs
StatePublished - Apr 7 2006

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Tunnelling magnetoresistance
Tunnel junctions
Magnetoresistance
tunnel junctions
temperature dependence
barrier layers
Bias voltage
Temperature
Electric potential
electric potential
room temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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title = "Temperature dependence of magnetoresistance in magnetic tunnel junctions with different free layer structures",
abstract = "The temperature and bias voltage dependence of magnetoresistance and the resistance of two types of magnetic tunnel junction (MTJ) samples were studied. These two types of MTJ samples have different free layer structures, while having the same pinned layer structures and with the same material for free and reference layers. The layer structure for type 1 MTJs is 80Ru 8CoFeB 15 Al2 O3 50CoFeB 9Ru 54FeCo 350CrMnPt (in angstroms). The layer structure for type 2 MTJs is 80Ru 40CoFeB 50RuTa 40CoFeB 15 Al2 O3 50CoFeB 9Ru 54FeCo 350CrMnPt. The tunneling magnetoresistance (TMR) ratio [(RAP RP) RP] is about 26{\%} and 69{\%} at room temperature for type 1 and type 2 MTJs, respectively. A TMR as high as 107{\%} has been observed for type 2 MTJ samples at 13 K. By analysis of the voltage and temperature dependence of the resistance and magnetoresistance in these MTJs, we discuss the effects of the magnetic behavior of the free layers, barrier qualities, and barrier interfaces. The results clearly indicate that the micromagnetization orientation at the interface between the free layer and the barrier layer is one of the important factors that determines the TMR ratio.",
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AB - The temperature and bias voltage dependence of magnetoresistance and the resistance of two types of magnetic tunnel junction (MTJ) samples were studied. These two types of MTJ samples have different free layer structures, while having the same pinned layer structures and with the same material for free and reference layers. The layer structure for type 1 MTJs is 80Ru 8CoFeB 15 Al2 O3 50CoFeB 9Ru 54FeCo 350CrMnPt (in angstroms). The layer structure for type 2 MTJs is 80Ru 40CoFeB 50RuTa 40CoFeB 15 Al2 O3 50CoFeB 9Ru 54FeCo 350CrMnPt. The tunneling magnetoresistance (TMR) ratio [(RAP RP) RP] is about 26% and 69% at room temperature for type 1 and type 2 MTJs, respectively. A TMR as high as 107% has been observed for type 2 MTJ samples at 13 K. By analysis of the voltage and temperature dependence of the resistance and magnetoresistance in these MTJs, we discuss the effects of the magnetic behavior of the free layers, barrier qualities, and barrier interfaces. The results clearly indicate that the micromagnetization orientation at the interface between the free layer and the barrier layer is one of the important factors that determines the TMR ratio.

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