TEM study of crystalline structures of Cr-N thin films

X. Z. Li, J. Zhang, David J Sellmyer

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Cr-N films were grown on Si (001) substrates by reactive magnetron sputtering under an N2/Ar atmosphere at room temperature. The composition of the films, expressed as Cr1-xNx, can be varied by changing the N2/Ar pressure ratio during the synthesis process. Crystalline states of Cr-N films have been studied using electron diffraction. It is well known that two intermediate phases, Cr2N (hexagonal) and CrN (cubic), exist in the Cr-N system, and small variations around the ideal stoichiometry are tolerated. The present study shows that cubic CrN with vacancies rather than hexagonal Cr2N may exist in a Cr-N film with a thickness of about 50 nm produced under a low N2 partial pressure.

Original languageEnglish (US)
Pages (from-to)1010-1012
Number of pages3
JournalJournal of Applied Crystallography
Volume37
Issue number6
DOIs
StatePublished - Dec 1 2004

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Partial Pressure
Atmosphere
Electrons
Crystalline materials
Transmission electron microscopy
Pressure
Thin films
transmission electron microscopy
Temperature
thin films
pressure ratio
Reactive sputtering
Electron diffraction
Stoichiometry
Partial pressure
Magnetron sputtering
Vacancies
partial pressure
stoichiometry
magnetron sputtering

ASJC Scopus subject areas

  • Biochemistry, Genetics and Molecular Biology(all)

Cite this

TEM study of crystalline structures of Cr-N thin films. / Li, X. Z.; Zhang, J.; Sellmyer, David J.

In: Journal of Applied Crystallography, Vol. 37, No. 6, 01.12.2004, p. 1010-1012.

Research output: Contribution to journalArticle

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