Synthesis of gallium nitride nanoplates using laser-assisted metal organic chemical vapor deposition

P. Thirugnanam, Y. S. Zhou, H. R. Golgir, Y. Gao, Y. F. Lu

Research output: Contribution to conferencePaper

2 Scopus citations

Abstract

The m-plane oriented gallium nitride (GaN) nanoplates were successfully grown on silicon (Si) substrates using laser-assisted metal organic chemical vapor deposition (L-MOCVD). The morphology and>1010< orientation of the nanoplates were confirmed using scanning electron microscope and transmission electron microscope. The strong A1 (TO) mode of Raman spectra and (1010) peak of X-ray diffraction pattern confirmed the m-plane orientation of the GaN nanoplates. The repeated growth on the c- and m-plane of nanoplates resulted in the formation of interlinked GaN nanoplate networks. Our results suggest that L-MOCVD is a promising technique for the rapid growth of m-plane oriented GaN nanoplates on the Si substrates at low growth temperatures.

Original languageEnglish (US)
Pages888-892
Number of pages5
StatePublished - Dec 1 2013
Event32nd International Congress on Applications of Lasers and Electro-Optics, ICALEO 2013 - Miami, FL, United States
Duration: Oct 6 2013Oct 10 2013

Conference

Conference32nd International Congress on Applications of Lasers and Electro-Optics, ICALEO 2013
CountryUnited States
CityMiami, FL
Period10/6/1310/10/13

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Thirugnanam, P., Zhou, Y. S., Golgir, H. R., Gao, Y., & Lu, Y. F. (2013). Synthesis of gallium nitride nanoplates using laser-assisted metal organic chemical vapor deposition. 888-892. Paper presented at 32nd International Congress on Applications of Lasers and Electro-Optics, ICALEO 2013, Miami, FL, United States.