Synthesis and exfoliation of quasi-1D (Zr,Ti)S3 solid solutions for device measurements

Dmitry S. Muratov, Vladislav O. Vanyushin, Nataliia S. Vorobeva, Polina Jukova, Alexey Lipatov, Evgeny A. Kolesnikov, Dmitry Karpenkov, Denis V. Kuznetsov, Alexander Sinitskii

Research output: Contribution to journalArticle

Abstract

Transition metal trichalcogenides (TMTCs), such as TiS3 and ZrS3, attract growing interest because of their peculiar quasi-one-dimensional (quasi-1D) structure and promising electronic properties. In this study, we investigated Zr1-xTixS3 solid solutions and demonstrated that they could be prepared through the direct reaction between Zr–Ti alloys and sulfur vapor at 800 °C. We varied the Zr/Ti atomic ratio in the alloys from 80/20 to 20/80 and found that in all cases the resulting solid solution crystals had a composition close to Zr0.8Ti0.2S3. The excessive titanium, if present, formed the secondary TiS2 phase, which was detected by the powder X-ray diffraction (XRD) analysis and observed in scanning electron microscopy (SEM) images in the form of hexagonal crystals. The Zr1-xTixS3 solid solutions formed distinct needle-like crystals, whose shape was consistent with the quasi-1D structure of TMTCs. We demonstrated that these crystals could be mechanically exfoliated into thin nanoribbons by an adhesive tape approach and used for device fabrication and electrical measurements. The transport measurements of Zr0.82Ti0.18S2.86 devices revealed their n-type conductivity and electron mobility of about 2 cm2 V−1 s−1, as well as photoresponse to visible light.

Original languageEnglish (US)
Article number152316
JournalJournal of Alloys and Compounds
Volume815
DOIs
StatePublished - Jan 30 2020

Fingerprint

Solid solutions
Crystals
Transition metals
Nanoribbons
Carbon Nanotubes
Electron mobility
Titanium
Sulfur
Electronic properties
Needles
Tapes
X ray diffraction analysis
Adhesives
Vapors
Powders
Fabrication
Scanning electron microscopy
Chemical analysis

Keywords

  • Field-effect transistors
  • Mechanical exfoliation
  • Quasi-one-dimensional materials
  • Solid solutions
  • TiS
  • Transition metal trichalcogenides
  • ZrS

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Synthesis and exfoliation of quasi-1D (Zr,Ti)S3 solid solutions for device measurements. / Muratov, Dmitry S.; Vanyushin, Vladislav O.; Vorobeva, Nataliia S.; Jukova, Polina; Lipatov, Alexey; Kolesnikov, Evgeny A.; Karpenkov, Dmitry; Kuznetsov, Denis V.; Sinitskii, Alexander.

In: Journal of Alloys and Compounds, Vol. 815, 152316, 30.01.2020.

Research output: Contribution to journalArticle

Muratov, DS, Vanyushin, VO, Vorobeva, NS, Jukova, P, Lipatov, A, Kolesnikov, EA, Karpenkov, D, Kuznetsov, DV & Sinitskii, A 2020, 'Synthesis and exfoliation of quasi-1D (Zr,Ti)S3 solid solutions for device measurements', Journal of Alloys and Compounds, vol. 815, 152316. https://doi.org/10.1016/j.jallcom.2019.152316
Muratov DS, Vanyushin VO, Vorobeva NS, Jukova P, Lipatov A, Kolesnikov EA et al. Synthesis and exfoliation of quasi-1D (Zr,Ti)S3 solid solutions for device measurements. Journal of Alloys and Compounds. 2020 Jan 30;815. 152316. https://doi.org/10.1016/j.jallcom.2019.152316
Muratov, Dmitry S. ; Vanyushin, Vladislav O. ; Vorobeva, Nataliia S. ; Jukova, Polina ; Lipatov, Alexey ; Kolesnikov, Evgeny A. ; Karpenkov, Dmitry ; Kuznetsov, Denis V. ; Sinitskii, Alexander. / Synthesis and exfoliation of quasi-1D (Zr,Ti)S3 solid solutions for device measurements. In: Journal of Alloys and Compounds. 2020 ; Vol. 815.
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abstract = "Transition metal trichalcogenides (TMTCs), such as TiS3 and ZrS3, attract growing interest because of their peculiar quasi-one-dimensional (quasi-1D) structure and promising electronic properties. In this study, we investigated Zr1-xTixS3 solid solutions and demonstrated that they could be prepared through the direct reaction between Zr–Ti alloys and sulfur vapor at 800 °C. We varied the Zr/Ti atomic ratio in the alloys from 80/20 to 20/80 and found that in all cases the resulting solid solution crystals had a composition close to Zr0.8Ti0.2S3. The excessive titanium, if present, formed the secondary TiS2 phase, which was detected by the powder X-ray diffraction (XRD) analysis and observed in scanning electron microscopy (SEM) images in the form of hexagonal crystals. The Zr1-xTixS3 solid solutions formed distinct needle-like crystals, whose shape was consistent with the quasi-1D structure of TMTCs. We demonstrated that these crystals could be mechanically exfoliated into thin nanoribbons by an adhesive tape approach and used for device fabrication and electrical measurements. The transport measurements of Zr0.82Ti0.18S2.86 devices revealed their n-type conductivity and electron mobility of about 2 cm2 V−1 s−1, as well as photoresponse to visible light.",
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AU - Vorobeva, Nataliia S.

AU - Jukova, Polina

AU - Lipatov, Alexey

AU - Kolesnikov, Evgeny A.

AU - Karpenkov, Dmitry

AU - Kuznetsov, Denis V.

AU - Sinitskii, Alexander

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AB - Transition metal trichalcogenides (TMTCs), such as TiS3 and ZrS3, attract growing interest because of their peculiar quasi-one-dimensional (quasi-1D) structure and promising electronic properties. In this study, we investigated Zr1-xTixS3 solid solutions and demonstrated that they could be prepared through the direct reaction between Zr–Ti alloys and sulfur vapor at 800 °C. We varied the Zr/Ti atomic ratio in the alloys from 80/20 to 20/80 and found that in all cases the resulting solid solution crystals had a composition close to Zr0.8Ti0.2S3. The excessive titanium, if present, formed the secondary TiS2 phase, which was detected by the powder X-ray diffraction (XRD) analysis and observed in scanning electron microscopy (SEM) images in the form of hexagonal crystals. The Zr1-xTixS3 solid solutions formed distinct needle-like crystals, whose shape was consistent with the quasi-1D structure of TMTCs. We demonstrated that these crystals could be mechanically exfoliated into thin nanoribbons by an adhesive tape approach and used for device fabrication and electrical measurements. The transport measurements of Zr0.82Ti0.18S2.86 devices revealed their n-type conductivity and electron mobility of about 2 cm2 V−1 s−1, as well as photoresponse to visible light.

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