Surface regions of amorphous Si and crystalline Al in an Al-implanted Si crystal

J. Tafto, R. L. Sabatini, J. I. Budnick, F. Namavar

Research output: Contribution to journalArticle

Abstract

Implantation of 1 × 1018 ions/cm2 of Al at 100 keV into a single crystal of silicon in a 10-8 Torr vacuum system results in the formation of a 0.3 um surface region containing about 50% Al and 50% Si. Transmission electron microscopy studies show that the Al atoms form crystalline Al of grain size about 100 Å, and these grains are embedded in amorphous Si. In contrast to amorphous Si produced by other techniques, the amorphous Si produced by the ion implantation recrystallizes when illuminated with 120 keV electrons.

Original languageEnglish (US)
Pages (from-to)5-8
Number of pages4
JournalMaterials Letters
Volume5
Issue number1-2
DOIs
StatePublished - Dec 1986

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vacuum systems
ion implantation
implantation
grain size
Crystalline materials
Ion implantation
transmission electron microscopy
Crystals
single crystals
silicon
crystals
atoms
ions
electrons
Silicon
Single crystals
Vacuum
Ions
Transmission electron microscopy
Atoms

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Surface regions of amorphous Si and crystalline Al in an Al-implanted Si crystal. / Tafto, J.; Sabatini, R. L.; Budnick, J. I.; Namavar, F.

In: Materials Letters, Vol. 5, No. 1-2, 12.1986, p. 5-8.

Research output: Contribution to journalArticle

Tafto, J. ; Sabatini, R. L. ; Budnick, J. I. ; Namavar, F. / Surface regions of amorphous Si and crystalline Al in an Al-implanted Si crystal. In: Materials Letters. 1986 ; Vol. 5, No. 1-2. pp. 5-8.
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