Surface and optical properties of nanocrystalline GaN thin films on sapphire (0001) by pulsed laser deposition

H. Q. Ni, Yongfeng Lu, J. H. Teng, Y. X. Jie, Z. H. Mai, Z. M. Ren

Research output: Contribution to journalConference article

Abstract

GaN thin films have been grown on sapphire (0001) substrates by pulsed laser deposition. The thin films deposited at different substrate temperature have been evaluated by X-ray diffraction (XRD), photoluminescence spectroscopy (PL), and X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM). The influences of depositing temperature on surface and optical properties of the GaN thin films have been studied. The XRD results show that the lowest full width at half maximum (FWHM) of (0002) X-ray diffraction line of the GaN film was deposited at about 700 °C. The photoluminescence (PL) spectra were measured at 7 K. The quantum confinement effects of the nanocrystalline GaN films have been evaluated by the band edge PL peaks. The energy shift of the band edge PL peaks of GaN film deposited at 700 °C have been estimated by the effective mass approximation method. The chemical composition and the native oxide of the GaN film surface were investigated by the XPS spectra. Average roughness and surface morphology of the GaN thin films deposited on the sapphire (0001) substrates have been evaluated by AFM.

Original languageEnglish (US)
Pages (from-to)224-231
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3898
StatePublished - Dec 1 1999
EventProceedings of the 1999 Photonic Systems and Applications in Defence and Manufacturing - Singapore, Singapore
Duration: Dec 1 1999Dec 3 1999

Fingerprint

Pulsed Laser Deposition
Aluminum Oxide
Sapphire
Photoluminescence
Pulsed laser deposition
Optical Properties
surface properties
pulsed laser deposition
Surface properties
Photoluminescence spectroscopy
Thin Films
sapphire
Optical properties
X-ray Diffraction
optical properties
Spectroscopy
Thin films
X-ray Spectroscopy
Atomic Force Microscopy
Substrate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Surface and optical properties of nanocrystalline GaN thin films on sapphire (0001) by pulsed laser deposition. / Ni, H. Q.; Lu, Yongfeng; Teng, J. H.; Jie, Y. X.; Mai, Z. H.; Ren, Z. M.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 3898, 01.12.1999, p. 224-231.

Research output: Contribution to journalConference article

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AU - Ni, H. Q.

AU - Lu, Yongfeng

AU - Teng, J. H.

AU - Jie, Y. X.

AU - Mai, Z. H.

AU - Ren, Z. M.

PY - 1999/12/1

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N2 - GaN thin films have been grown on sapphire (0001) substrates by pulsed laser deposition. The thin films deposited at different substrate temperature have been evaluated by X-ray diffraction (XRD), photoluminescence spectroscopy (PL), and X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM). The influences of depositing temperature on surface and optical properties of the GaN thin films have been studied. The XRD results show that the lowest full width at half maximum (FWHM) of (0002) X-ray diffraction line of the GaN film was deposited at about 700 °C. The photoluminescence (PL) spectra were measured at 7 K. The quantum confinement effects of the nanocrystalline GaN films have been evaluated by the band edge PL peaks. The energy shift of the band edge PL peaks of GaN film deposited at 700 °C have been estimated by the effective mass approximation method. The chemical composition and the native oxide of the GaN film surface were investigated by the XPS spectra. Average roughness and surface morphology of the GaN thin films deposited on the sapphire (0001) substrates have been evaluated by AFM.

AB - GaN thin films have been grown on sapphire (0001) substrates by pulsed laser deposition. The thin films deposited at different substrate temperature have been evaluated by X-ray diffraction (XRD), photoluminescence spectroscopy (PL), and X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM). The influences of depositing temperature on surface and optical properties of the GaN thin films have been studied. The XRD results show that the lowest full width at half maximum (FWHM) of (0002) X-ray diffraction line of the GaN film was deposited at about 700 °C. The photoluminescence (PL) spectra were measured at 7 K. The quantum confinement effects of the nanocrystalline GaN films have been evaluated by the band edge PL peaks. The energy shift of the band edge PL peaks of GaN film deposited at 700 °C have been estimated by the effective mass approximation method. The chemical composition and the native oxide of the GaN film surface were investigated by the XPS spectra. Average roughness and surface morphology of the GaN thin films deposited on the sapphire (0001) substrates have been evaluated by AFM.

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