SURFACE ANALYSIS OF AMORPHOUS Ta-Cu ALLOY THIN FILMS.

J. J. Pocuh, J. E. Oh, J. A. Woollam, K. D. Aylesworth, D. J. Sellmyer

Research output: Contribution to journalConference article

Abstract

In the present investigation, amorphous thin (approximately 3000 Angstrom thick) Ta-Cu alloy films, with varying composition, were deposited on GaAs substrates by co-sputtering of high purity (99. 999%) Ta and Cu targets. A Au layer was subsequently deposited on each Ta-Cu sample. Annealing temperatures as high as 800 degree C were used. The AES data, combined with the elemental sensitivity factors, provided information on the nominal stoichiometry of the alloy film. Inter-diffusion involving the amorphous layer, the Au and GaAs were studied by AES. ESCA analysis provided additional information on the chemical bonding states of the constituent elements. The Ta//9//3Cu//7 film prevented the intermixing of Au, Ga and As for annealing up to 700 degree C. Out-diffusion of Ga and As though the Ta//9//3Cu// 7 layer was detected after an 800 degree C anneal.

Original languageEnglish (US)
Number of pages1
JournalSurface and Interface Analysis
Volume11
Issue number6
StatePublished - Apr 1 1987
EventProc of the 9th Symp on Appl Surf Anal - Dayton, OH, USA
Duration: Jun 3 1987Jun 5 1987

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Annealing
annealing
Chemical elements
Stoichiometry
Sputtering
stoichiometry
purity
sputtering
sensitivity
Substrates
Chemical analysis
Temperature
temperature
gallium arsenide

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

SURFACE ANALYSIS OF AMORPHOUS Ta-Cu ALLOY THIN FILMS. / Pocuh, J. J.; Oh, J. E.; Woollam, J. A.; Aylesworth, K. D.; Sellmyer, D. J.

In: Surface and Interface Analysis, Vol. 11, No. 6, 01.04.1987.

Research output: Contribution to journalConference article

@article{03467df5c0a14052b13a187c40986da5,
title = "SURFACE ANALYSIS OF AMORPHOUS Ta-Cu ALLOY THIN FILMS.",
abstract = "In the present investigation, amorphous thin (approximately 3000 Angstrom thick) Ta-Cu alloy films, with varying composition, were deposited on GaAs substrates by co-sputtering of high purity (99. 999{\%}) Ta and Cu targets. A Au layer was subsequently deposited on each Ta-Cu sample. Annealing temperatures as high as 800 degree C were used. The AES data, combined with the elemental sensitivity factors, provided information on the nominal stoichiometry of the alloy film. Inter-diffusion involving the amorphous layer, the Au and GaAs were studied by AES. ESCA analysis provided additional information on the chemical bonding states of the constituent elements. The Ta//9//3Cu//7 film prevented the intermixing of Au, Ga and As for annealing up to 700 degree C. Out-diffusion of Ga and As though the Ta//9//3Cu// 7 layer was detected after an 800 degree C anneal.",
author = "Pocuh, {J. J.} and Oh, {J. E.} and Woollam, {J. A.} and Aylesworth, {K. D.} and Sellmyer, {D. J.}",
year = "1987",
month = "4",
day = "1",
language = "English (US)",
volume = "11",
journal = "Surface and Interface Analysis",
issn = "0142-2421",
publisher = "John Wiley and Sons Ltd",
number = "6",

}

TY - JOUR

T1 - SURFACE ANALYSIS OF AMORPHOUS Ta-Cu ALLOY THIN FILMS.

AU - Pocuh, J. J.

AU - Oh, J. E.

AU - Woollam, J. A.

AU - Aylesworth, K. D.

AU - Sellmyer, D. J.

PY - 1987/4/1

Y1 - 1987/4/1

N2 - In the present investigation, amorphous thin (approximately 3000 Angstrom thick) Ta-Cu alloy films, with varying composition, were deposited on GaAs substrates by co-sputtering of high purity (99. 999%) Ta and Cu targets. A Au layer was subsequently deposited on each Ta-Cu sample. Annealing temperatures as high as 800 degree C were used. The AES data, combined with the elemental sensitivity factors, provided information on the nominal stoichiometry of the alloy film. Inter-diffusion involving the amorphous layer, the Au and GaAs were studied by AES. ESCA analysis provided additional information on the chemical bonding states of the constituent elements. The Ta//9//3Cu//7 film prevented the intermixing of Au, Ga and As for annealing up to 700 degree C. Out-diffusion of Ga and As though the Ta//9//3Cu// 7 layer was detected after an 800 degree C anneal.

AB - In the present investigation, amorphous thin (approximately 3000 Angstrom thick) Ta-Cu alloy films, with varying composition, were deposited on GaAs substrates by co-sputtering of high purity (99. 999%) Ta and Cu targets. A Au layer was subsequently deposited on each Ta-Cu sample. Annealing temperatures as high as 800 degree C were used. The AES data, combined with the elemental sensitivity factors, provided information on the nominal stoichiometry of the alloy film. Inter-diffusion involving the amorphous layer, the Au and GaAs were studied by AES. ESCA analysis provided additional information on the chemical bonding states of the constituent elements. The Ta//9//3Cu//7 film prevented the intermixing of Au, Ga and As for annealing up to 700 degree C. Out-diffusion of Ga and As though the Ta//9//3Cu// 7 layer was detected after an 800 degree C anneal.

UR - http://www.scopus.com/inward/record.url?scp=0023326624&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023326624&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0023326624

VL - 11

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

SN - 0142-2421

IS - 6

ER -