SURFACE ANALYSIS OF AMORPHOUS Ta-Cu ALLOY THIN FILMS.

J. J. Pouch, J. E. Oh, J. A. Woollam, K. D. Aylesworth, D. J. Sellmyer

Research output: Contribution to journalConference article

Abstract

In the present investigation, amorphous thin (approximately 3000 Angstrom thick) Ta-Cu alloy films, with varying composition, were deposited on GaAs substrates by co-sputtering of high purity (99. 999%) Ta and Cu targets. A Au layer was subsequently deposited on each Ta-Cu sample. Annealing temperatures as high as 800 degree C were used. The AES data, combined with the elemental sensitivity factors, provided information on the nominal stoichiometry of the alloy film. Inter-diffusion involving the amorphous layer, the Au and GaAs were studied by AES. ESCA analysis provided additional information on the chemical bonding states of the constituent elements. The Ta//9//3Cu//7 film prevented the intermixing of Au, Ga and As for annealing up to 700 degree C. Out-diffusion of Ga and As through the Ta//9//3Cu// 7 layer was detected after an 800 degree C anneal.

Original languageEnglish (US)
Number of pages1
JournalJournal of molecular electronics
Volume4
Issue number1
StatePublished - Jan 1 1988
EventProc of the 9th Symp on Appl Surf Anal - Dayton, OH, USA
Duration: Jun 3 1987Jun 5 1987

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Annealing
annealing
Chemical elements
Stoichiometry
Sputtering
stoichiometry
purity
sputtering
sensitivity
Substrates
Chemical analysis
Temperature
temperature
gallium arsenide

ASJC Scopus subject areas

  • Engineering(all)

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SURFACE ANALYSIS OF AMORPHOUS Ta-Cu ALLOY THIN FILMS. / Pouch, J. J.; Oh, J. E.; Woollam, J. A.; Aylesworth, K. D.; Sellmyer, D. J.

In: Journal of molecular electronics, Vol. 4, No. 1, 01.01.1988.

Research output: Contribution to journalConference article

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AU - Oh, J. E.

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AU - Sellmyer, D. J.

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N2 - In the present investigation, amorphous thin (approximately 3000 Angstrom thick) Ta-Cu alloy films, with varying composition, were deposited on GaAs substrates by co-sputtering of high purity (99. 999%) Ta and Cu targets. A Au layer was subsequently deposited on each Ta-Cu sample. Annealing temperatures as high as 800 degree C were used. The AES data, combined with the elemental sensitivity factors, provided information on the nominal stoichiometry of the alloy film. Inter-diffusion involving the amorphous layer, the Au and GaAs were studied by AES. ESCA analysis provided additional information on the chemical bonding states of the constituent elements. The Ta//9//3Cu//7 film prevented the intermixing of Au, Ga and As for annealing up to 700 degree C. Out-diffusion of Ga and As through the Ta//9//3Cu// 7 layer was detected after an 800 degree C anneal.

AB - In the present investigation, amorphous thin (approximately 3000 Angstrom thick) Ta-Cu alloy films, with varying composition, were deposited on GaAs substrates by co-sputtering of high purity (99. 999%) Ta and Cu targets. A Au layer was subsequently deposited on each Ta-Cu sample. Annealing temperatures as high as 800 degree C were used. The AES data, combined with the elemental sensitivity factors, provided information on the nominal stoichiometry of the alloy film. Inter-diffusion involving the amorphous layer, the Au and GaAs were studied by AES. ESCA analysis provided additional information on the chemical bonding states of the constituent elements. The Ta//9//3Cu//7 film prevented the intermixing of Au, Ga and As for annealing up to 700 degree C. Out-diffusion of Ga and As through the Ta//9//3Cu// 7 layer was detected after an 800 degree C anneal.

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