Suppression of Parasitic Bipolar Effects and Off-State Leakage in Fully-Depleted SOI n-MOSFET's Using Ge-lmplantation

Hua Fang Wei, James E. Chung, Nader M. Kalkhoran, Fereydoon Namavar

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This work demonstrates a well-controlled technique of channel defect engineering, by implanting germanium into the channel of a Silicon-On-Insulator (SOI) MOSFET to generate subgap energy states. These subgap states act as minority-carrier lifetime killers to spoil the parasitic bipolar gain, and thus improve the source-to-drain breakdown voltage and reduce the front-channel gate-induced-drain-leakage (GIDL). The Ge-implant also serves the dual purpose of positioning most of the subgap states in the back interface region which reduce back-channel off-state leakage.

Original languageEnglish (US)
Pages (from-to)2096-2103
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume42
Issue number12
DOIs
StatePublished - Dec 1995

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Germanium
Carrier lifetime
Silicon
Electric breakdown
Electron energy levels
Defects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Suppression of Parasitic Bipolar Effects and Off-State Leakage in Fully-Depleted SOI n-MOSFET's Using Ge-lmplantation. / Wei, Hua Fang; Chung, James E.; Kalkhoran, Nader M.; Namavar, Fereydoon.

In: IEEE Transactions on Electron Devices, Vol. 42, No. 12, 12.1995, p. 2096-2103.

Research output: Contribution to journalArticle

Wei, Hua Fang ; Chung, James E. ; Kalkhoran, Nader M. ; Namavar, Fereydoon. / Suppression of Parasitic Bipolar Effects and Off-State Leakage in Fully-Depleted SOI n-MOSFET's Using Ge-lmplantation. In: IEEE Transactions on Electron Devices. 1995 ; Vol. 42, No. 12. pp. 2096-2103.
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