Superconducting critical field of Nb3Ge1-xSnx pseudobinaries

Samuel A. Alterovitz, Edward J. Haugland, John A. Woollam, John J. Engelhardt, George W. Webb

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Abstract

Upper critical fields, Hc2(T), and residual resistivities, 0, of Nb3Ge1-xSnx pseudobinaries with 0<~x<~1 produced by chemical vapor deposition were measured in fields up to 140 kG. The upper critical field Hc2(0) exhibits a minimum at x0.4. The temperature dependence of Hc2 for all ternary concentrations follows the theory of dirty type-II superconductors. The coefficient of the electronic specific heat, the band density of states Nb(0), and the electron-phonon coupling parameter are determined as a function of x and 0. Estimated electron-phonon coupling parameters suggest a high Fermi-surface average of McMillan's parameter I2 for Nb3Ge.

Original languageEnglish (US)
Pages (from-to)4485-4492
Number of pages8
JournalPhysical Review B
Volume23
Issue number9
DOIs
StatePublished - Jan 1 1981

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Alterovitz, S. A., Haugland, E. J., Woollam, J. A., Engelhardt, J. J., & Webb, G. W. (1981). Superconducting critical field of Nb3Ge1-xSnx pseudobinaries. Physical Review B, 23(9), 4485-4492. https://doi.org/10.1103/PhysRevB.23.4485