Study of temperature-dependent ultrathin oxide growth on Si(111) using variable-angle spectroscopic ellipsometry

Bhola N. De, John A. Woollam

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Using the monolayer-sensitive variable-angle spectroscopic ellipsometry technique,we have studied the temperature-dependent growth mechanisms of an ultrathin oxide layer on top of silicon. The oxidation was done in atomic oxygen produced in a pure oxygen plasma and driven by an r.f. power source. The results have been compared with the recently proposed model of Murali and Murarka for ultrathin oxide growth on top of silicon. The activation energies of different growth parameters associated with the oxide growth have also been determined.

Original languageEnglish (US)
Pages (from-to)312-317
Number of pages6
JournalThin Solid Films
Volume193-194
Issue numberPART 1
DOIs
StatePublished - 1990

Fingerprint

Spectroscopic ellipsometry
Oxides
ellipsometry
oxides
Silicon
Oxygen
Temperature
temperature
oxygen plasma
silicon
Monolayers
Activation energy
activation energy
Plasmas
Oxidation
oxidation
oxygen

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Study of temperature-dependent ultrathin oxide growth on Si(111) using variable-angle spectroscopic ellipsometry. / De, Bhola N.; Woollam, John A.

In: Thin Solid Films, Vol. 193-194, No. PART 1, 1990, p. 312-317.

Research output: Contribution to journalArticle

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