Study of temperature-dependent ultrathin oxide growth on Si(111) using variable-angle spectroscopic ellipsometry

Bhola N. De, John A. Woollam

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Using the monolayer-sensitive variable-angle spectroscopic ellipsometry technique,we have studied the temperature-dependent growth mechanisms of an ultrathin oxide layer on top of silicon. The oxidation was done in atomic oxygen produced in a pure oxygen plasma and driven by an r.f. power source. The results have been compared with the recently proposed model of Murali and Murarka for ultrathin oxide growth on top of silicon. The activation energies of different growth parameters associated with the oxide growth have also been determined.

Original languageEnglish (US)
Pages (from-to)312-317
Number of pages6
JournalThin Solid Films
Issue numberPART 1
Publication statusPublished - 1990


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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