Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

S. A. Alterovitz, R. M. Sieg, H. D. Yao, P. G. Snyder, J. A. Woollam, J. Pamulapati, P. K. Bhattacharya, P. A. Sekula-Moise

Research output: Contribution to journalArticle

3 Scopus citations


Variable-angle spectroscopic ellipsometry was used to estimate the thickness of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thickness were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

Original languageEnglish (US)
Pages (from-to)288-293
Number of pages6
JournalThin Solid Films
Issue number1-2
Publication statusPublished - Dec 10 1991


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this