Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

S. A. Alterovitz, R. M. Sieg, H. D. Yao, P. G. Snyder, J. A. Woollam, J. Pamulapati, P. K. Bhattacharya, P. A. Sekula-Moise

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Variable-angle spectroscopic ellipsometry was used to estimate the thickness of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thickness were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

Original languageEnglish (US)
Pages (from-to)288-293
Number of pages6
JournalThin Solid Films
Volume206
Issue number1-2
DOIs
StatePublished - Dec 10 1991

Fingerprint

Spectroscopic ellipsometry
High electron mobility transistors
Molecular beam epitaxy
ellipsometry
molecular beam epitaxy
field effect transistors
Organic Chemicals
modulation
Organic chemicals
Substrates
metalorganic chemical vapor deposition
Chemical vapor deposition
critical point
penetration
Metals
Calibration
shift
estimates
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry. / Alterovitz, S. A.; Sieg, R. M.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

In: Thin Solid Films, Vol. 206, No. 1-2, 10.12.1991, p. 288-293.

Research output: Contribution to journalArticle

Alterovitz, SA, Sieg, RM, Yao, HD, Snyder, PG, Woollam, JA, Pamulapati, J, Bhattacharya, PK & Sekula-Moise, PA 1991, 'Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry', Thin Solid Films, vol. 206, no. 1-2, pp. 288-293. https://doi.org/10.1016/0040-6090(91)90437-3
Alterovitz, S. A. ; Sieg, R. M. ; Yao, H. D. ; Snyder, P. G. ; Woollam, J. A. ; Pamulapati, J. ; Bhattacharya, P. K. ; Sekula-Moise, P. A. / Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry. In: Thin Solid Films. 1991 ; Vol. 206, No. 1-2. pp. 288-293.
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