Studies of pulsed laser deposition mechanism of WO3 thin films

H. Qiu, Y. F. Lu

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

The growth dynamics of WO3 thin films by laser ablation of a WO3 monoclinic phase target was studied. Space and time-resolved optical spectra indicated the presence of neutral (WI), ionized (WII) and electronically excited molecule (WO) species in the plume. The reaction between W and O2 was manifested in the laser deposition. Raman spectra showed the films deposited over a target-substrate distance longer than 5 cm or (/and) under an ambient oxygen pressure lower than 200 mTorr deviated from the monoclinic phase of the target with shortened and bent bonds. This was due to the insufficient surface or (/and) gas oxidation. The oxygen pressure and the target-substrate distance were found to be important features in the stoichiometric and monoclinic phase formation. Both gas and surface reactions were responsible for the ultimate monoclinic phase formation in the pulse laser deposition. Parameters were optimised for the oxygen pressure and target-substrate distance.

Original languageEnglish (US)
Pages (from-to)183-187
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number1
DOIs
Publication statusPublished - Jan 2001

    Fingerprint

Keywords

  • Gas reaction
  • Optical emission spectroscopy
  • Pulsed laser deposition
  • Raman spectroscopy
  • Surface oxidation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this