Studies of carbon nitride thin films synthesized by KrF excimer laser ablation of graphite in a nitrogen atmosphere

Yongfeng Lu, Z. M. Ren, W. D. Song, D. S.H. Chan, T. S. Low, K. Gamani, G. Chen, K. Li

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Carbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in a nitrogen atmosphere. Different excimer laser fluences and pressures of the nitrogen atmosphere were used in order to achieve a nitrogen content as high as possible in the deposited thin films. Fourier transform infrared and x-ray photoelectron spectroscopies were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The N/C ratio 0.42 was obtained at an excimer laser fluence of 0.8 J cm-2 at a repetition rate of 10 Hz under a nitrogen pressure of PN= 100 mTorr. A high content of C=N double bond instead of C≡N triple band was indicated in the deposited thin films. Ellipsometry was used to analyze the optical properties of the deposited thin films. The carbon nitride thin films have amorphous-semiconductorlike characteristics with an optical band gap Eopt of 0.42 eV.

Original languageEnglish (US)
Pages (from-to)2909-2912
Number of pages4
JournalJournal of Applied Physics
Volume84
Issue number5
DOIs
StatePublished - Sep 1 1998

Fingerprint

carbon nitrides
excimer lasers
laser ablation
graphite
nitrogen
atmospheres
thin films
fluence
x ray spectroscopy
ablation
ellipsometry
repetition
pulsed lasers
photoelectron spectroscopy
wafers
optical properties
silicon
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Studies of carbon nitride thin films synthesized by KrF excimer laser ablation of graphite in a nitrogen atmosphere. / Lu, Yongfeng; Ren, Z. M.; Song, W. D.; Chan, D. S.H.; Low, T. S.; Gamani, K.; Chen, G.; Li, K.

In: Journal of Applied Physics, Vol. 84, No. 5, 01.09.1998, p. 2909-2912.

Research output: Contribution to journalArticle

Lu, Yongfeng ; Ren, Z. M. ; Song, W. D. ; Chan, D. S.H. ; Low, T. S. ; Gamani, K. ; Chen, G. ; Li, K. / Studies of carbon nitride thin films synthesized by KrF excimer laser ablation of graphite in a nitrogen atmosphere. In: Journal of Applied Physics. 1998 ; Vol. 84, No. 5. pp. 2909-2912.
@article{d0a0d41e84da4af3a31f180b907c57f4,
title = "Studies of carbon nitride thin films synthesized by KrF excimer laser ablation of graphite in a nitrogen atmosphere",
abstract = "Carbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in a nitrogen atmosphere. Different excimer laser fluences and pressures of the nitrogen atmosphere were used in order to achieve a nitrogen content as high as possible in the deposited thin films. Fourier transform infrared and x-ray photoelectron spectroscopies were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The N/C ratio 0.42 was obtained at an excimer laser fluence of 0.8 J cm-2 at a repetition rate of 10 Hz under a nitrogen pressure of PN= 100 mTorr. A high content of C=N double bond instead of C≡N triple band was indicated in the deposited thin films. Ellipsometry was used to analyze the optical properties of the deposited thin films. The carbon nitride thin films have amorphous-semiconductorlike characteristics with an optical band gap Eopt of 0.42 eV.",
author = "Yongfeng Lu and Ren, {Z. M.} and Song, {W. D.} and Chan, {D. S.H.} and Low, {T. S.} and K. Gamani and G. Chen and K. Li",
year = "1998",
month = "9",
day = "1",
doi = "10.1063/1.368446",
language = "English (US)",
volume = "84",
pages = "2909--2912",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Studies of carbon nitride thin films synthesized by KrF excimer laser ablation of graphite in a nitrogen atmosphere

AU - Lu, Yongfeng

AU - Ren, Z. M.

AU - Song, W. D.

AU - Chan, D. S.H.

AU - Low, T. S.

AU - Gamani, K.

AU - Chen, G.

AU - Li, K.

PY - 1998/9/1

Y1 - 1998/9/1

N2 - Carbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in a nitrogen atmosphere. Different excimer laser fluences and pressures of the nitrogen atmosphere were used in order to achieve a nitrogen content as high as possible in the deposited thin films. Fourier transform infrared and x-ray photoelectron spectroscopies were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The N/C ratio 0.42 was obtained at an excimer laser fluence of 0.8 J cm-2 at a repetition rate of 10 Hz under a nitrogen pressure of PN= 100 mTorr. A high content of C=N double bond instead of C≡N triple band was indicated in the deposited thin films. Ellipsometry was used to analyze the optical properties of the deposited thin films. The carbon nitride thin films have amorphous-semiconductorlike characteristics with an optical band gap Eopt of 0.42 eV.

AB - Carbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in a nitrogen atmosphere. Different excimer laser fluences and pressures of the nitrogen atmosphere were used in order to achieve a nitrogen content as high as possible in the deposited thin films. Fourier transform infrared and x-ray photoelectron spectroscopies were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The N/C ratio 0.42 was obtained at an excimer laser fluence of 0.8 J cm-2 at a repetition rate of 10 Hz under a nitrogen pressure of PN= 100 mTorr. A high content of C=N double bond instead of C≡N triple band was indicated in the deposited thin films. Ellipsometry was used to analyze the optical properties of the deposited thin films. The carbon nitride thin films have amorphous-semiconductorlike characteristics with an optical band gap Eopt of 0.42 eV.

UR - http://www.scopus.com/inward/record.url?scp=0000563796&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000563796&partnerID=8YFLogxK

U2 - 10.1063/1.368446

DO - 10.1063/1.368446

M3 - Article

VL - 84

SP - 2909

EP - 2912

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 5

ER -