Structure of Sc 2O 3 films epitaxially grown on α-Al 2O 3 (111)

A. R. Kortan, M. Hong, J. Kwo, P. Chang, C. P. Chen, J. P. Mannaerts, Sy-Hwang Liou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

We have characterized the structure of the epitaxial Sc 2O 3 films grown on α-Al 2O 3 (111) substrate using molecular beam epitaxy (MBE) techniques. The Sc 2O 3 films grow in the bulk bixbyite phase with a very uniform thickness, and a high structural perfection. They grow with their cubic (111) axis parallel to the rhombohedral (111) axis of the sapphire substrate. The in-plane orientation of the films, however, is rotated by ±30 degrees with respect to the substrate rhombohedral axes. This is explained by the presence of two equivalent orientations of the 3-fold axis of the film on the quasi 6-fold surface of the substrate.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsJ. Morais, D. Kumar, M. Houssa, R.K. Singh, D. Landheer, R. Ramesh, R.M. Wallace, S. Guha, H. Koinuma
Pages329-334
Number of pages6
Volume811
Publication statusPublished - 2004
EventIntegration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions - San Francisco, CA, United States
Duration: Apr 13 2004Apr 16 2004

Other

OtherIntegration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions
CountryUnited States
CitySan Francisco, CA
Period4/13/044/16/04

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kortan, A. R., Hong, M., Kwo, J., Chang, P., Chen, C. P., Mannaerts, J. P., & Liou, S-H. (2004). Structure of Sc 2O 3 films epitaxially grown on α-Al 2O 3 (111) In J. Morais, D. Kumar, M. Houssa, R. K. Singh, D. Landheer, R. Ramesh, R. M. Wallace, S. Guha, ... H. Koinuma (Eds.), Materials Research Society Symposium Proceedings (Vol. 811, pp. 329-334)