Strong room-temperature infrared emission from Er-implanted porous Si

Fereydoon Namavar, Feng Lu, Clive H. Perry, Annmarie Cremins, Nader M. Kalkhoran, Richard A. Soref

Research output: Contribution to journalArticle

61 Scopus citations

Abstract

This communication demonstrates a strong, room-temperature (RT), infrared (IR) (1.54 μm) emission from Er-implanted red-emitting (peaked at 1.9 eV) porous silicon (Er:PSi). Erbium was implanted into porous Si, bulk Si, and quartz with a dose of 1015/cm2 at 190 keV and annealed for 30 minutes in N2 at temperatures ranging from 500 °C to 900 °C under identical conditions. No RT IR emission was observed from Er implanted quartz and silicon after annealing at 650 °C (although after annealing at 900 °C very weak emission was observed from quartz at 9 K). The highest RT emission intensity at 1.54 μm was from Er:PSi with a peak concentration of 1.5×1020/cm3 and annealed at 650 °C. Even the luminescence intensity from Er:PSi annealed at 500 °C was 26 times higher than that observed from Er-implanted quartz at 400 keV and annealed at 900 °C. A reduction in photoluminescence (PL) intensity of about a factor of two from Er:PSi over the 9 to 300 K temperature range was observed which is consistent with Er in wide band gap materials.

Original languageEnglish (US)
Pages (from-to)4813-4815
Number of pages3
JournalJournal of Applied Physics
Volume77
Issue number9
DOIs
Publication statusPublished - Dec 1 1995

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Namavar, F., Lu, F., Perry, C. H., Cremins, A., Kalkhoran, N. M., & Soref, R. A. (1995). Strong room-temperature infrared emission from Er-implanted porous Si. Journal of Applied Physics, 77(9), 4813-4815. https://doi.org/10.1063/1.359403