Strain studies of silicon-germanium epilayers on silicon substrates using Raman spectroscopy

F. Lu, C. H. Perry, Fereydoon Namavar, N. L. Rowell, R. A. Soref

Research output: Contribution to journalArticle

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Abstract

Atmospheric pressure chemical vapor deposition techniques have been used to grow electronic quality Si-Ge epilayers on Si substrates. The degree of tetragonal strain in the layers has been determined using Raman spectroscopy. The relative energy shift of the Si-Si phonon line associated with the Si 1-xGex epilayers from a pseudoalloy of the same composition was used as a quantitative measure of the strain. Layer growth was found to be almost commensurate with the Si substrates for thicknesses in the region of ∼100 nm. For x≅0.1 the resulting films were highly strained and homogeneous. The strain diminished with increasing thickness and it was estimated that a layer would be fully relaxed when the thickness exceeded 3000 nm. The phonon linewidths provided information on the epilayer and interface quality.

Original languageEnglish (US)
Pages (from-to)1243-1245
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number9
DOIs
StatePublished - Dec 1 1993

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germanium
Raman spectroscopy
silicon
atmospheric pressure
vapor deposition
shift
electronics
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Strain studies of silicon-germanium epilayers on silicon substrates using Raman spectroscopy. / Lu, F.; Perry, C. H.; Namavar, Fereydoon; Rowell, N. L.; Soref, R. A.

In: Applied Physics Letters, Vol. 63, No. 9, 01.12.1993, p. 1243-1245.

Research output: Contribution to journalArticle

Lu, F. ; Perry, C. H. ; Namavar, Fereydoon ; Rowell, N. L. ; Soref, R. A. / Strain studies of silicon-germanium epilayers on silicon substrates using Raman spectroscopy. In: Applied Physics Letters. 1993 ; Vol. 63, No. 9. pp. 1243-1245.
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